NTMFS4933NT1G ON Semiconductor, NTMFS4933NT1G Datasheet

NTMFS4933NT1G

Manufacturer Part Number

NTMFS4933NT1G

Description

MOSFET N-CH 30V 232A SO8 FL

Manufacturer

ON Semiconductor

Series

-r

Datasheet

1.NTMFS4933NT3G.pdf (7 pages)

Specifications of NTMFS4933NT1G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

1.2 mOhm @ 30A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

20A

Vgs(th) (max) @ Id

2.2V @ 250µA

Gate Charge (qg) @ Vgs

62.1nC @ 4.5V

Input Capacitance (ciss) @ Vds

10930pF @ 15V

Power - Max

950mW

Mounting Type

Package / Case

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

2 mOhms

Forward Transconductance Gfs (max / Min)

82 S

Drain-source Breakdown Voltage

30 V

Continuous Drain Current

34 A

Power Dissipation

2.74 W

Mounting Style

SMD/SMT

Fall Time

23 ns

Gate Charge Qg

62.1 nC

Rise Time

33 ns

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

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NTMFS4933N

Power MOSFET

30 V, 210 A, Single N−Channel, SO−8 FL

Features

•

Applications

•

End Products

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

April, 2011 − Rev. 4

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current R

(Note 1)

Power Dissipation

Continuous Drain

Current R

(Note 1)

Power Dissipation

Continuous Drain

Current R

(Note 2)

Power Dissipation

Continuous Drain

Current R

(Note 1)

Power Dissipation

Pulsed Drain

Current

Operating Junction and Storage

Temperature

Source Current (Body Diode)

Drain to Source DV/DT

Single Pulse Drain−to−Source Avalanche

Energy (T

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Compliant

Low R

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

OR−ing FET, Power Load Switch, Motor Control

Refer to Application Note AND8195/D for Mounting Information

Server, UPS, Fault−Tolerant Power Systems, Hot Swap

qJA

qJC

= 58 A

≤ 10 s (Note 1)

(Note 1)

(Note 2)

(Note 1)

DS(on)

qJA

qJC

, L = 0.3 mH, R

= 25°C, V

≤ 10 s

to Improve Conduction and Overall Efficiency

Parameter

Steady

State

= 24 V, V

= 25°C, t

= 25 W)

= 25°C unless otherwise stated)

= 100°C

= 10 V,

=100°C

= 10 ms

= 25°C

Symbol

dV/d

DSS

STG

−55 to

Value

+150

21.5

2.74

10.2

12.5

0.95

±20

210

132

104

400

504

260

4.4

V/ns

Unit

°C

†For information on tape and reel specifications,

NTMFS4933NT1G

NTMFS4933NT3G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SO−8 FLAT LEAD

(BR)DSS

CASE 488AA

30 V

(Note: Microdot may be in either location)

Device

STYLE 1

G (4)

ORDERING INFORMATION

N−CHANNEL MOSFET

= Assembly Location

= Year

= Work Week

= Pb−Free Package

http://onsemi.com

2.0 mW @ 4.5 V

1.2 mW @ 10 V

D (5,6)

DS(ON)

(Pb−Free)

Package

SO−8 FL

Publication Order Number:

MAX

S (1,2,3)

MARKING

DIAGRAM

NTMFS4933N/D

AYWWG

Tape & Reel

4933N

Shipping

1500 /

5000 /

210 A

MAX

†

Related parts for NTMFS4933NT1G

NTMFS4933NT1G Summary of contents

Page 1

... Microdot may be in either location 400 −55 to °C J Device T +150 STG NTMFS4933NT1G S dV/d 4.4 V/ 504 mJ NTMFS4933NT3G AS †For information on tape and reel specifications, T 260 °C L including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State (Note 4) Junction−to−Ambient – (t ≤ (Note 3) 3. Surface−mounted on FR4 board using 1 sq−in pad Cu. 4. ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance ...

Page 4

200 180 3.4 V 160 140 120 100 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.0027 0.0025 0.0023 0.0021 0.0019 0.0017 0.0015 0.0013 0.0011 ...

Page 5

C iss 11000 10000 9000 8000 7000 6000 5000 C 4000 oss 3000 2000 1000 C rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 10000 ...

Page 6

D = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 260 240 220 200 180 160 140 12 100 TYPICAL CHARACTERISTICS 0.001 0.01 0.1 t, TIME ...

Page 7

... M 3.200 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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