MJB5742T4G ON Semiconductor, MJB5742T4G Datasheet - Page 4

TRANS PWR BIP NPN D2PAK

MJB5742T4G

Manufacturer Part Number
MJB5742T4G
Description
TRANS PWR BIP NPN D2PAK
Manufacturer
ON Semiconductor
Series
-r
Datasheet

Specifications of MJB5742T4G

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
3V @ 400mA, 8A
Current - Collector Cutoff (max)
-
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 4A, 5V
Power - Max
2W
Frequency - Transition
-
Mounting Type
*
Package / Case
*
Rohs Compliant
YES
Transistor Polarity
NPN
Power Dissipation Pd
2W
Dc Collector Current
8A
Dc Current Gain Hfe
200
Operating Temperature Range
-65°C To +150°C
Transistor Case Style
TO-263
No. Of Pins
3
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJB5742T4G
Manufacturer:
ON Semiconductor
Quantity:
500
DUTY CYCLE ≤ 10%
NOTE:
PW and V
R
B
Adjusted for Desired I
t
r
, t
COIL DATA:
FERROXCUBE CORE #6656
FULL BOBBIN (~16 TURNS) #16
V
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
f
CE
I
≤ 10 ns
C
CC
P
Adjusted for Desired I
I
W
C(pk)
TIM
E
V
68
V
t
CE
1
clamp
B1
OR
0.02 mF
0.001 mF
t
Table 1. Test Conditions for Dynamic Performance
f
1N493
t
1
k
2
270
C
3
+ 5 V
CLAMPED
OUTPUT WAVEFORMS
t
1
k
t
f
1
k 2N2905
2N222
33
1N493
2
1/2
t
W
47
GAP FOR 200 mH/20 A
L
1N493
coil
3
= 200 mH
http://onsemi.com
3
100
33
t
OBTAIN I
t
t
MJE21
MJE20
1
1
2
- V
R
+ 5 V
ADJUSTED TO
0
B
0
BE(off)
I
4
B
L
L
coil
coil
V
T.U.T.
V
C
clamp
CC
(I
(I
C
C
pk
pk
V
)
)
CC
L
I
C
TEST EQUIPMENT
SCOPE-TEKTRONICS
475 OR EQUIVALENT
51
5.1
MR826
V
V
I
k
C(pk)
CC
CE(pk)
*
*SELECTED FOR ≥ 1 kV
= 30 V
= 6 A
V
V
CE
= 250 Vdc
clamp
V
D1 = 1N5820 OR EQUIV.
t
DUTY CYCLE = 1%
R
FOR DESIRED I
r
R
CC
+10 V
, t
B
B
f
AND R
D
1
< 10 ns
SWITCHING
= 250 V
0
RESISTIVE
- 4 V
- 9.2 V
TUT
C
ADJUSTED
+V
B
CC
25 ms
R
AND I
C
SCOPE
C

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