MAX2209EBS+T10 Maxim Integrated Products, MAX2209EBS+T10 Datasheet - Page 2

• Manufacturer Part Number: MAX2209EBS+T10
• Description: IC RF POWER DETECTOR 4-UCSP
• Manufacturer: Maxim Integrated Products
• Type: RF Detectorr

Specifications of MAX2209EBS+T10

• Input Type: Voltage
• Output Type: Voltage
• Interface: RF
• Current - Supply: 6mA
• Mounting Type: Surface Mount
• Package / Case: 4-UCSP®
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

AC ELECTRICAL CHARACTERISTICS
(T
V
RFIN to GND ......................................... -0.3V to + (V
OUT to GND .......................................... -0.3V to + (V
RFIN Input Power .......................................................... +10dBm
Continuous Power Dissipation (T
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a
Note 2: For detailed information on soldering, refer to Application Note 1891: Wafer-Level Packaging (WLP) and Its Applications.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
RF Power Detector
ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS
(V
noted.) (Note 3)
Note 3: Guaranteed by production test at T
Note 4: Guaranteed by design and characterization. See the Typical Operating Characteristics.
2
RF Input Frequency
RF Input VSWR
Output Voltage, 836MHz
Output Voltage, 1950MHz
Residual Error after Room
Temperature Calibration
(T
Supply Voltage
Supply Current
Idle Output Voltage
Output Current Source Capability
Output Current Sink Capability
CC
A
CC
4-Bump WLP (derate 3mW/NC above +70NC) .............238mW
A
= -40NC to +85NC, 50I system, V
______________________________________________________________________________________
to GND .............................................................-0.3V to +6V
= -40NC to +85NC) (Note 4)
= 2.7V to 5.0V, T
CAUTION! ESD SENSITIVE DEVICE
4-layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
T
A
PARAMETER
PARAMETER
= +85NC.
A
= -40NC to +85NC, no RF signal applied. Typical values are at V
A
= +70NC)
CC
800MHz
2000MHz
-5dBm input
-25dBm input
-5dBm input
-25dBm input
-5dBm input
-25dBm input
V
P
No RF signal, V
CC
IN
= 2.8V. Typical values are at T
= 0dBm, V
= 2.8V, no RF signal
A
= +25NC. Guaranteed by design and characterization at T
CC
CC
OUT
OUT
+ 0.3V)
+ 0.3V)
forced to 0.5V
CONDITIONS
CONDITIONS
forced to 2V
Junction-to-Ambient Thermal
Operating Temperature Range .......................... -40NC to +85NC
Storage Temperature Range ............................ -65NC to +160NC
Junction Temperature ....................................................+150NC
Bump Temperature (soldering, Note 2)
Resistance (B
Infrared (15s) ...............................................................+260NC
A
= +25NC, unless otherwise noted.) (Note 3)
JA
) (Note 1) ..........................................335NC/W
CC
= 2.8V, T
MIN
750
300
2.7
MIN
800
A
A
= +25NC, unless otherwise
1800
TYP
525
TYP
0.88
0.06
0.72
0.06
3.6
35
-17
-12
= -40NC and
MAX
MAX
2000
Q0.5
Q1.5
5.0
6
UNITS
UNITS
MHz
mA
mV
FA
FA
dB
dB
V
V
V