MCZ145012EG Freescale Semiconductor, MCZ145012EG Datasheet - Page 9

• Manufacturer Part Number: MCZ145012EG
• Description: IC SMOKE DETECT PHOTOELEC 16SOIC
• Manufacturer: Freescale Semiconductor
• Type: Smoke Detectorr

Specifications of MCZ145012EG

• Input Type: Logic
• Output Type: Voltage
• Current - Supply: 12µA
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.300", 7.5mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Interface: -
• Lead Free Status / Rohs Status: Details

Table 4. Pin Description
Sensors
Freescale Semiconductor
Pin No.
1
2
3
9. Values for R4, R5, and C6 may differ depending on type of piezoelectric horn used.
10.C2 and R13 are used for coarse sensitivity adjustment. Typical values are shown.
11.R9 is for fine sensitivity adjustment (optional). If fixed resistors are used, R8 = 12 k, R10 is 5.6 k to 10 k, and R9 is eliminated.
12.C4 should be 22 µF if B1 is a carbon battery. C4 could be reduced to 1 µF when an alkaline battery is used.
Auxiliary Alarm(S),
And/or Auto-dialer
Remote Alarm(S),
Escape Light(S),
When R9 is used, noise pickup is increased due to antenna effects. Shielding may be required.
Pin Name
DETECT
100 µF
MC145012(s),
C1
C2
C5
R12
1 k
To Other
+
A capacitor connected to this pin as shown in
button test and chamber sensitivity test (high gain). The capacitor value is chosen such that the alarm is tripped from
background reflections in the chamber during push-button test.
A
A capacitor connected to this pin as shown in
push-button or chamber sensitivity tests.
A
smoke detections.
Resistor R14 must be installed in series with C2. R14 ≈ [1/(12√C2)] - 680 where R14 is in ohms and C2 is in farads.
This input to the high-gain pulse amplifier is tied to the cathode of an external photodiode. The photodiode should have
low capacitance and low dark leakage current. The diode must be shunted by a load resistor and is operated at zero
bias.
The Detect input must be AC/DC decoupled from all other signals, V
pin must be minimized, also. See
v
v
R9
Current
≈ 1 + (C1/10) where C1 is in pF. CAUTION: The value of the closed-loop gain should not exceed 10,000.
≈ 1 + (C2/10) where C2 is in pF. This gain increases about 10% during the IRED pulse, after two consecutive local
8.2 k
4.7 k
R10
0.047 µF
R8
(11)
5 k
4700 pF
IR
C1
C2
Q1
(10)
R13
4.7 TO 22
IR Emitter
R11 250 k
IR Detector
(10)
D3
D2
Figure 8. Typical Battery-Powered Application
1 TO 22 µF
560 Ω
R14
C4
5
1
2
3
4
6
7
8
(12)
C1
C2
DETECT
STROBE
VDD
IRED
I/O
BRASS
+
Figure
9 V
B1
9.
MC145012
Figure 8
Figure 8
Description
D1
determines the gain of the on-chip photo amplifier except during
LOW-SUPPLY
determines the gain of the on-chip photo amplifier during push-
FEEDBACK
SILVER
TEST
TRIP
OSC
VSS
LED
Protection
Reverse
R1
Polarity
Circuit
DD
16
15
14
13
12
11
10
9
, and V
1500 pF
2.2 M
R5
SS
(9)
100 k
0.01 µF
C3
. Lead length and/or foil traces to this
R1
C6
SW1
Pushbutton
(9)
Test
7.5 M
R2
470
R3
100 k
R4
(9)
D4
Visible
LED
Horn
X1
MC145012
R6
100 k
R7
47 k
9