GP1S53VJ000F Sharp Electronics, GP1S53VJ000F Datasheet - Page 3

• Manufacturer Part Number: GP1S53VJ000F
• Manufacturer: Sharp Electronics
• Type: Transmissiver

Specifications of GP1S53VJ000F

• Number Of Elements: 1
• Output Device: Phototransistor
• Gap Width: 5mm
• Slit Width: 0.5mm
• Reverse Breakdown Voltage: 6V
• Collector-emitter Voltage: 35V
• Forward Current: 50mA
• Collector Current (dc) (max): 20mA
• Power Dissipation: 75mW
• Fall Time: 20000ns
• Rise Time: 15000ns
• Pin Count: 4
• Mounting: Through Hole
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Fig. 5 Collector Current vs.
Fig. 7 Collector Current vs.
Fig. 9 Response Time vs.
100
3.0
2.5
2.0
1.5
1.0
0.5
0.5
0.2
0.1
50
20
10
0.01 0.02 0.05 0.1 0.2
- 25
5
4
3
2
1
0
0
5
2
1
Forward Current
Load Resistance
Ambient Temperature
0
V
I
T
C
V
T
I
V
CE
a
= 2mA
F
= 25˚C
CE
a
CE
= 20mA
= 2V
= 25˚C
10
0
= 5V
= 5V
Ambient temperature T
Forward current I
t
t
d
s
Load resistance R
20
25
t
f
t
r
0.5
30
50
F
( mA )
L
a
1
( k
( ˚C )
2
40
75
)
5
100
50
10
Input
R
Fig.6 Collector Current vs.
Fig. 8 Collector-emitter Saturation Voltage vs.
D
0.25
0.15
0.05
0.3
0.2
0.1
- 25
Test Circuit for Response Time
5
4
3
2
1
0
0
Collector-emitter Voltage
Ambient Temperature
0
V
T
CC
R
a
1
I
I
= 25˚C
F
C
L
= 40mA
= 0.2mA
Output
Collector-emitter voltage V
0
2
Ambient temperature T
3
25
4
Output
Input
5
t
d
I
50
F
t
GP1S53V/GP1S58V
= 50mA
6
r
40mA
30mA
20mA
10mA
a
7
CE
( ˚C )
t
75
s
( V )
8
9
t
100
f
10
10%
90%