C232HM-EDHSL-0 FTDI, Future Technology Devices International Ltd, C232HM-EDHSL-0 Datasheet - Page 11

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C232HM-EDHSL-0

Manufacturer Part Number
C232HM-EDHSL-0
Description
CABLE ASSEMBLIES
Manufacturer
FTDI, Future Technology Devices International Ltd
Series
-r
Datasheet

Specifications of C232HM-EDHSL-0

Mfg Application Notes
LibMPSSE-I2C AppNote LibMPSSE-SPI AppNote
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
768-1105
Parameter
Table 3.7 C232HD-DDHSP-0 and C232HD-EDHSP-0 I/O Pin Characteristics
* The I/O drive strength and slow slew-rate are configurable in the EEPROM.
The I/O pins are +3.3v cells, which are +5V tolerant
3.3.1 C232HM-DDHSL-0 and C232HM-EDHSL-0 I/O Characteristics
Voh
Vt+
Rpu
Rpd
Vol
Vih
Ioz
Vt-
Iin
Vil
Vt
Schmitt trigger negative
Tri-state output leakage
Input pull-up resistance
going threshold voltage
Schmitt trigger positive
going threshold voltage
Input Leakage Current
Input High Switching
Output Voltage High
Switching Threshold
Output Voltage Low
Input low Switching
Input pull-down
Description
Copyright © 2011 Future Technology Devices International Limited
resistance
Threshold
Threshold
current
Minimum
2.40
2.00
0.80
40
40
15
Typical
3.14
3.20
3.22
3.22
0.18
0.12
0.08
0.07
1.50
1.10
1.60
±10
75
75
45
-
-
Maximum
USB 2.0 HI-SPEED TO MPSSE CABLE Datasheet
0.40
0.80
2.00
190
190
85
-
Document Reference No.: FT_000401
Units
KΩ
KΩ
μA
μA
V
V
V
V
V
V
V
V
V
V
V
V
V
I/O Drive strength* = 4mA
I/O Drive strength* = 8mA
I/O Drive strength* = 4mA
I/O Drive strength* = 8mA
Clearance No.: FTDI# 214
I/O Drive strength* =
I/O Drive strength* =
I/O Drive strength* =
I/O Drive strength* =
Vin = 5.5V or 0
Ioh = +/-2mA
Iol = +/-2mA
Conditions
Vin =VCCIO
Vin = 0
Vin = 0
12mA
16mA
12mA
16mA
LVTTL
LVTTL
LVTTL
Version 1.0
10

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