BAS21J NXP Semiconductors, BAS21J Datasheet - Page 6

• Manufacturer Part Number: BAS21J
• Description: 58T1330
• Manufacturer: NXP Semiconductors

Specifications of BAS21J

• Diode Type: Fast Recovery
• Forward Current If(av): 250mA
• Repetitive Reverse Voltage Vrrm Max: 300V
• Forward Voltage Vf Max: 1.1V
• Reverse Recovery Time Trr Max: 50ns
• Rohs Compliant: Yes

NXP Semiconductors
8. Test information
BAS21J_1
Product data sheet
Fig 5. Reverse recovery time test circuit and waveforms
(1) I
V = V
R
Input signal: reverse pulse rise time t
Oscilloscope: rise time t
S
R
R
= 50
= 1 mA
I
F
R
S
I
F
r
= 0.35 ns
D.U.T.
r
OSCILLOSCOPE
= 0.6 ns; reverse voltage pulse duration t
mga881
SAMPLING
R
i
= 50
Rev. 01 — 8 March 2007
V
R
t
10 %
r
90 %
input signal
t
p
p
= 100 ns; duty cycle
Single high-speed switching diode
t
I
F
= 0.05
output signal
© NXP B.V. 2007. All rights reserved.
BAS21J
t rr
(1)
t
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