AUIRFR1018E International Rectifier, AUIRFR1018E Datasheet

AUIRFR1018E

Manufacturer Part Number

AUIRFR1018E

Description

54T8886

Manufacturer

International Rectifier

Datasheet

1.AUIRFR1018E.pdf (12 pages)

Specifications of AUIRFR1018E

Transistor Polarity

N Channel

Continuous Drain Current Id

56A

Drain Source Voltage Vds

60V

On Resistance Rds(on)

0.0071ohm

Rds(on) Test Voltage Vgs

10V

Power Dissipation Pd

110W

Rohs Compliant

Yes

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

79 A

Power Dissipation

110 W

Mounting Style

SMD/SMT

Package / Case

DPAK

Gate Charge Qg

46 nC

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AUIRFR1018E

Manufacturer:

Quantity:

12 500

Current page: 1 of 12
Download datasheet (234Kb)

Features

●

Description

Specifically designed for Automotive applications, this HEXFET

Power MOSFET utilizes the latest processing techniques to achieve

extremely low on-resistance per silicon area. Additional features of

this design are a 175°C junction operating temperature, fast switching

speed and improved repetitive avalanche rating . These features

combine to make this design an extremely efficient and reliable

device for use in Automotive applications and a wide variety of other

applications.

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (T

HEXFET

*Qualification standards can be found at http://www.irf.com/

dv/dt

Thermal Resistance

www.irf.com

STG

θJC

θJA

@ T

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

Symbol

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally limited)

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Junction-to-Case

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

Parameter

AUTOMOTIVE GRADE

@ 10V (Silicon Limited)

@ 10V (Wire Bond Limited)

) is 25°C, unless otherwise specified.

Gate

Typ.

–––

AUIRFR1018E

D (Silicon Limited)

D (Package Limited)

DSS

DS(on)

-55 to + 175

HEXFET Power MOSFET

AUIRFR1018E

Max.

0.76

± 20

315

110

300

D-Pak

Drain

typ.

max.

Max.

1.32

110

7.1m

8.4m

79A

Source

56A

60V

Units

°C/W

W/°C

V/ns

°C

06/17/11

Related parts for AUIRFR1018E

AUIRFR1018E Summary of contents

Page 1

... Parameter k j AUIRFR1018E HEXFET Power MOSFET V 60V D DSS R typ. 7.1m DS(on) max. 8.4m I 79A D (Silicon Limited) I 56A S D (Package Limited) D-Pak AUIRFR1018E G D Gate Drain Source Max 315 110 0.76 ± - 175 300 Typ. Max. ––– 1.32 ––– ...

Page 2

Static Electrical @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance R Internal ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com † Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension ...

Page 4

PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 175° 25° 25V ...

Page 5

175° 25°C 1 0.1 0.0 0.5 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 80 LIMITED BY PACKAGE ...

Page 6

D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse 0.01 10 0.05 0.10 1 Allowed ...

Page 7

Temperature ( °C ) Fig 16. Threshold Voltage vs. Temperature 47A 51V T J ...

Page 8

D.U.T + ƒ ‚ - • • • SD • Fig 21 D.U 20V V GS 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 ...

Page 9

www.irf.com 9 ...

Page 10

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 11

... Ordering Information Base part number Package Type AUIRFR1018E Dpak www.irf.com Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 Tape and Reel Right 3000 Complete Part Number AUIRFR1018E AUIRFR1018ETR AUIRFR1018ETRL AUIRFR1018ETRR 11 ...

Page 12

... Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’ ...

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