SI9956DY Vishay, SI9956DY Datasheet - Page 3

• Manufacturer Part Number: SI9956DY
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI9956DY

• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 3.5A
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Not Compliant

Document Number: 70140
S-00652—Rev. L, 27-Mar-00
0.20
0.16
0.12
0.08
0.04
15
12
10
9
6
3
0
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 1.8 A
= 10 V
On-Resistance vs. Drain Current
V
2
3
DS
2
Q
Output Characteristics
g
– Drain-to-Source Voltage (V)
I
D
– Total Gate Charge (nC)
V
– Drain Current (A)
GS
Gate Charge
4
6
= 10 – 5 V
V
4
GS
= 4.5 V
6
9
V
GS
= 10 V
6
4 V
12
8
3 V
10
15
8
700
600
500
400
300
200
100
2.0
1.6
1.2
0.8
0.4
15
12
9
6
3
0
0
0
–50
0
0
On-Resistance vs. Junction Temperature
V
I
–25
D
GS
= 2.2 A
1
V
V
= 10 V
DS
GS
T
Transfer Characteristics
J
5
0
– Junction Temperature ( C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
2
www.vishay.com FaxBack 408-970-5600
C
Capacitance
25
rss
T
Vishay Siliconix
C
10
50
3
25 C
= –55 C
C
75
oss
4
Si9956DY
100
15
C
125 C
5
iss
125
150
20
6
3