BTS612N1 Infineon Technologies, BTS612N1 Datasheet

BTS612N1

Manufacturer Part Number
BTS612N1
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS612N1

Switch Type
High Side
Power Switch Family
BTS612N1
Input Voltage
-10 to 16V
Power Switch On Resistance
160mOhm
Output Current
1.8A
Number Of Outputs
Dual
Mounting
Through Hole
Supply Current
600uA
Package Type
TO-220AB
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Pin Count
7 +Tab
Power Dissipation
36W
Lead Free Status / Rohs Status
Not Compliant

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Smart Two Channel Highside Power Switch
Features
Application
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
1
Semiconductor Group
)
Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
Open drain diagnostic output
Open load detection in OFF-state
CMOS compatible input
Loss of ground and loss of V
Electrostatic discharge (ESD) protection
feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits
C compatible power switch with diagnostic
With external current limit (e.g. resistor R
connection, reverse load current limited by connected load.
5
3
6
IN1
IN2
ST
PROFET
ESD
Voltage
Voltage
sensor
source
Logic
V
1 )
Logic
bb
protection
Overvoltage
protection
Level shifter
Charge
Charge
Level shifter
pump 1
pump 2
Rectifier 2
Rectifier 1
2
GND
Signal GND
GND
=150 ) in GND connection, resistor in series with ST
Current
Current
limit 1
limit 2
1 of 15
Product Summary
Overvoltage protection
Operating voltage
On-state resistance R
Load current (ISO)
Current limitation
Short to Vbb
Short to Vbb
Open load
unclamped
ind. loads 1
Open load
unclamped
ind. loads 2
detection 2
detection 1
Limit for
Limit for
Standard
protection
protection
Gate 2
Gate 1
1
Temperature
Temperature
sensor 1
sensor 2
7
channels:
TO-220AB/7
Straight leads
I
I
L(ISO)
L(SCr)
PROFET ® BTS612N1
ON
V
V
bb(AZ)
bb(on)
+ V bb
OUT1
OUT2
1
each
200
2.3
1
7
4
7
4
Load GND
5.0 ... 34 V
both
parallel
Load
2003-Oct-01
100 m
SMD
4.4
43
1
4
7
A
A
V

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BTS612N1 Summary of contents

Page 1

... Level shifter Limit for unclamped Rectifier 2 Temperature ind. loads 2 sensor 2 Open load Short to Vbb detection 2 GND 2 Signal GND =150 ) in GND connection, resistor in series with ST GND PROFET ® BTS612N1 V 43 bb(AZ) V 5.0 ... 34 V bb(on) both channels: each parallel 200 100 2.3 4.4 ...

Page 2

... IN: all other pins: require an external current limit for the GND and status pins, e.g. with a bb(AZ) resistor in series with the status pin. A resistor for the 2 BTS612N1 Symbol Values Load dump I self-limited L T -40 ...+150 j -55 ...+150 ...

Page 3

... I L(GNDhigh see diagram 90 OUT 10 OUT off dV /dt T =-40...+150° -dV/dt T =-40...+150° (one layer thick) copper area for BTS612N1 Values min typ max -- -- 3 7 Values min typ max -- 160 200 320 400 1.8 2.3 -- 3.5 4.4 -- ...

Page 4

... T =-40...+150° bb(over) T =-40...+150° bb(o rst) T =-40...+150° bb(over) T =-40...+150° bb(AZ) I bb(off) T =-40...+150° GND I GND = 5.6 V typ without charge pump >5 BTS612N1 Values Unit min typ max 5 3 5.0 7.0 -- 5.6 7 ...

Page 5

... Semiconductor Group Symbol each channel I L(SCp) =-40° =25° =+150° L(SCr mA ON(CL > out bb T =150 ° ON(rev) I L(off =-40..150° OUT(OL) 5 BTS612N1 Values Unit min typ max 5.5 9 4.5 7.5 11 2.5 4 150 -- -- ° 610 -- -- ...

Page 6

... GND Semiconductor Group Symbol each channel ) =-40..+150 V j IN(T+) T =-40..+150° IN(T-) V IN( IN(off IN(on) t d(ST OL3) = +1.6 mA ST(high) = +1.6 mA ST(low) = +1.6 mA BTS612N1 Values Unit min typ max 2.5 3 1.7 -- 3 220 -- s 5.4 6 ...

Page 7

... V ON1 V ON2 OUT1 OUT1 V OUT2 ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase V the off state, causes an internal current from output to ground BTS612N1 OUT1 OUT2 ST BTS611L1 BTS612N1 H ...

Page 8

... PROFET Any kind of load. In case of Input=high is V Due to V GND GND disconnect with GND pull GND R GND 3.5 k typ I Any kind of load Due to V GND 8 BTS612N1 > typ.; IN low OUT OFF I L(OL) Open load Logic detection unit Signal GND IN1 1 OUT1 PROFET ...

Page 9

... L R Semiconductor Group with an approximate solution for Maximum allowable load inductance for a single switch off [mH] 7 1000 100 Load OUT · i (t) dt, ON(CL BTS612N1 · (1+ · · bb OUT(CL · L (both channels parallel 150°C,T = 150°C const., j,start 2003-Oct-01 · OUT(CL) ...

Page 10

... Channel active thJC p Z [K/W] thJC 10 1 0.1 0.01 1E-5 1E-4 1E-3 1E-2 Semiconductor Group D= 0.5 0.2 0.1 0.05 0.02 0.01 0 1E-1 1E0 1E1 t p [s] D= 0.5 0.2 0.1 0.05 0.02 0.01 0 1E-1 1E0 1E1 t p [s] 10 BTS612N1 2003-Oct-01 ...

Page 11

... I L Semiconductor Group Both channels are symmetric and consequently the diagrams are valid for each channel as well as for permuted channels Figure 2b: Switching an inductive load OUT Figure 3a: Short circuit shut down by overtempertature, reset by cooling BTS612N1 other channel: normal operation I L(SCp) I L(SCr) 2003-Oct- ...

Page 12

... typ L Figure 6a: Undervoltage OUT ST open drain t Figure 6b: Undervoltage restart of charge pump bb(under) t d(ST OL3) charge pump starts BTS612N1 V V bb(under) V bb(u rst) V ON(CL) V bb(over) V bb(o rst) bb(u rst) V bb(u cp) =5.6 V typ. bb(ucp) 2003-Oct-01 bb(u cp ...

Page 13

... Figure 7a: Overvoltage bb(over) ON(CL OUT ST Semiconductor Group V bb(o rst BTS612N1 2003-Oct-01 ...

Page 14

... Package and Ordering Code All dimensions in mm Standard TO-220AB/7 BTS612N1 Q67060-S6303-A2 TO 220AB/7, Opt. E3230 BTS612N1 E3230 Semiconductor Group SMD TO 220AB/7, Opt. E3128 BTS612N1 E3128A T&R: Ordering code Changed since 04.96 Date Dec 1996 Ordering code Q67060-S6303-A3 14 BTS612N1 Ordering code Q67060-S6303-A4 Change ...

Page 15

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Semiconductor Group 15 BTS612N1 2003-Oct-01 ...

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