LH28F800SGN-L70 Sharp Electronics, LH28F800SGN-L70 Datasheet - Page 8

• Manufacturer Part Number: LH28F800SGN-L70
• Manufacturer: Sharp Electronics

Specifications of LH28F800SGN-L70

• Cell Type: NOR
• Density: 8Mb
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 19b
• Operating Supply Voltage (typ): 3.3/5V
• Operating Temp Range: 0C to 70C
• Package Type: SOP
• Program/erase Volt (typ): 2.7/3.3/5/12V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7/4.5V
• Operating Supply Voltage (max): 3.6/5.5V
• Word Size: 16b
• Number Of Words: 512K
• Supply Current: 65mA
• Mounting: Surface Mount
• Pin Count: 44
• Lead Free Status / Rohs Status: Not Compliant

array mode. Four control pins dictate the data flow
in and out of the component : CE#, OE#, WE# and
RP#. CE# and OE# must be driven active to obtain
data at the outputs. CE# is the device selection
control, and when active enables the selected
memory device. OE# is the data output (DQ
control and when active drives the selected
memory data onto the I/O bus. WE# must be at V
and RP# must be at V
read cycle.
3.2 Output Disable
With OE# at a logic-high level (V
outputs are disabled. Output pins DQ
placed in a high-impedance state.
3.3 Standby
CE# at a logic-high level (V
standby mode which substantially reduces device
power consumption. DQ
in a high-impedance state independent of OE#. If
deselected during block erase, word write, or lock-
bit configuration, the device continues functioning,
and consuming active power until the operation
completes.
3.4 Deep Power-Down
RP# at V
In read modes, RP#-low deselects the memory,
places output drivers in a high-impedance state and
turns off all internal circuits. RP# must be held low
for a minimum of 100 ns. Time t
after return from power-down until initial memory
access outputs are valid. After this wake-up
interval, normal operation is restored. The CUI is
reset to read array mode and status register is set
to 80H.
IL
initiates the deep power-down mode.
IH
0
or V
-DQ
IH
) places the device in
15
HH
. Fig. 13 illustrates
outputs are placed
PHQV
IH
), the device
0
is required
-DQ
0
-DQ
15
are
15
IH
)
- 8 -
During block erase, word write, or lock-bit
configuration modes, RP#-low will abort the
operation. RY/BY# remains low until the reset
operation is complete. Memory contents being
altered are no longer valid; the data may be
partially erased or written. Time t
after RP# goes to logic-high (V
command can be written.
As with any automated device, it is important to
assert RP# during system reset. When the system
comes out of reset, it expects to read from the flash
memory. Automated flash memories provide status
information when accessed during block erase,
word write, or lock-bit configuration modes. If a
CPU reset occurs with no flash memory reset,
proper CPU initialization may not occur because
the flash memory may be providing status
information instead of array data. SHARP’s flash
memories allow proper CPU initialization following a
system reset through the use of the RP# input. In
this application, RP# is controlled by the same
RESET# signal that resets the system CPU.
LH28F800SG-L (FOR SOP)
IH
PHWL
) before another
is required