LH28F640BFE-PBTL90 Sharp Electronics, LH28F640BFE-PBTL90 Datasheet - Page 22

• Manufacturer Part Number: LH28F640BFE-PBTL90
• Manufacturer: Sharp Electronics

Specifications of LH28F640BFE-PBTL90

• Cell Type: NOR
• Density: 64Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 22b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 4M
• Supply Current: 25mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

sharp
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values are the reference values at V
2. I
3. Block erase, full chip erase, (page buffer) program and OTP program are inhibited when V
4. The Automatic Power Savings (APS) feature automatically places the device in power save mode after read cycle
5. Sampled, not 100% tested.
6. V
7. The operating current in dual work is the sum of the operating current (read, erase, program) in each plane.
I
V
V
V
V
V
V
V
V
PPES
Symbol
IL
IH
OL
OH
PPLK
PPH1
PPH2
LKO
unless V
mode, the device’s current draw is the sum of I
in the range between V
completion. Standard address access timings (t
program cannot be executed and should not be attempted.
Applying 12V±0.3V to V
supplies the memory cell current for block erasing and (page buffer) programming. Use similar power supply trace widths
and layout considerations given to the V
Applying 12V±0.3V to V
may be connected to 12V±0.3V for a total of 80 hours maximum.
CCWS
PP
is not used for power supply pin. With V
and I
V
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
V
Erase, (Page Buffer) Program or OTP
Program Operations
V
Program or OTP Program Operations
V
CC
Operations
PP
PP
PP
PP
CC
is specified.
CCES
Block Erase Suspend Current
Lockout during Normal
during Block Erase, (Page Buffer)
Lockout Voltage
during Block Erase, Full Chip
are specified with the device de-selected. If read or (page buffer) program while in block erase suspend
PPLK
Parameter
PP
PP
(max.) and V
provides fast erasing or fast programming mode. In this mode, V
during erase/program can only be done for a maximum of 1,000 cycles on each block. V
PPH1
CC
DC Characteristics (Continued)
power bus.
(min.), between V
AVQV
CCWS
PP
≤V
Notes
1,6,7
1,6,7
3,5,6
V
) provide new data when addresses are changed.
5
5
5
5
6
6
CC
LHF64F11
or I
PPLK
=2.7V-3.6V
CCES
, block erase, full chip erase, (page buffer) program and OTP
V
V
Min.
1.65
11.7
-0.4
-0.4
-0.2
1.5
CCQ
CCQ
and I
PPH1
CCR
(max.) and V
Typ.
3.0
10
12
2
or I
CCW
V
Max.
+ 0.4
12.3
200
0.4
0.2
0.4
3.6
CCQ
, respectively.
5
PPH2
(min.) and above V
Unit
µA
µA
V
V
V
V
V
V
V
V
PP
≤V
PP
CC
PPLK
V
V
V
V
I
V
V
I
is power supply pin and
OL
OH
PP
PP
CC
CCQ
CC
CCQ
=3.0V and T
=100µA
=-100µA
=V
=V
Test Conditions
=V
=V
, and not guaranteed
=V
=V
PPH1
PPH2
CC
CC
CCQ
CCQ
PPH2
Min.,
Min.,
Min.,
Min.,
Rev. 2.41
(max.).
A
=+25°C
20
PP