CY7C1324F-117AC Cypress Semiconductor Corp, CY7C1324F-117AC Datasheet

CY7C1324F-117AC

Manufacturer Part Number
CY7C1324F-117AC
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1324F-117AC

Density
2.25Mb
Access Time (max)
7.5ns
Sync/async
Synchronous
Architecture
SDR
Clock Freq (max)
117MHz
Operating Supply Voltage (typ)
3.3V
Address Bus
17b
Package Type
TQFP
Operating Temp Range
0C to 70C
Number Of Ports
2
Supply Current
220mA
Operating Supply Voltage (min)
3.135V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
100
Word Size
18b
Number Of Words
128K
Lead Free Status / Rohs Status
Not Compliant
Cypress Semiconductor Corporation
Document #: 38-05431 Rev. **
Features
Functional Description
The CY7C1324F is a 131,072 x 18 synchronous cache RAM
designed to interface with high-speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
• 128K x 18 common I/O
• 3.3V –5% and +10% core power supply (V
• 3.3V I/O supply (V
• Fast clock-to-output times
• Provide high-performance 2-1-1-1 access rate
• User-selectable burst counter supporting Intel
• Separate processor and controller address strobes
• Synchronous self-timed write
• Asynchronous output enable
• Supports 3.3V I/O level
• Offered in JEDEC-standard 100-pin TQFP package
• “ZZ” Sleep Mode option
A0,A1,A
Logic Block Diagram
— 6.5 ns (133-MHz version)
— 7.5 ns (117-MHz version)
Pentium
MODE
ADSC
ADSP
ADV
BW
BWE
BW
CLK
GW
CE
CE
CE
OE
ZZ
B
A
1
2
3
interleaved or linear burst sequences
DDQ
)
WRITE REGISTER
WRITE REGISTER
[1]
REGISTER
ADDRESS
DQ
DQ
CONTROL
REGISTER
ENABLE
SLEEP
B
A
,DQP
,DQP
B
A
COUNTER AND
CLR
2-Mb (128K x 18) Flow-Through Sync SRAM
BURST
LOGIC
DD
Q1
Q0
3901 North First Street
A[1:0]
)
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the
first address in a burst and increments the address automati-
cally for the rest of the burst access. All synchronous inputs
are gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
( CE
Control inputs ( ADSC , ADSP , and ADV ), Write Enables
( BW
i nputs include the Output Enable ( OE ) and the ZZ pin .
The CY7C1324F allows either interleaved or linear burst
sequences, selected by the MODE input pin. A HIGH selects
an interleaved burst sequence, while a LOW selects a linear
burst sequence. Burst accesses can be initiated with the
Processor Address Strobe (ADSP) or the cache Controller
Address Strobe (ADSC) inputs. Address advancement is
controlled by the Address Advancement (ADV) input.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor ( ADSP ) or
Address Strobe Controller ( ADSC ) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin ( ADV ).
The CY7C1324F operates from a +3.3V core power supply
while all outputs may operate with a +3.3V supply. All inputs
and outputs are JEDEC-standard JESD8-5-compatible.
WRITE DRIVER
WRITE DRIVER
DQ
DQ
1
A
[A:B]
B
), depth-expansion Chip Enables (CE
,DQP
,DQP
B
A
, and BWE ), and Global Write ( GW ). Asynchronous
San Jose
MEMORY
ARRAY
,
CA 95134
SENSE
AMPS
Revised January 29, 2004
BUFFERS
OUTPUT
CY7C1324F
2
REGISTERS
and CE
INPUT
408-943-2600
3
), Burst
DQs
DQP
DQP
A
B
[+] Feedback

Related parts for CY7C1324F-117AC

CY7C1324F-117AC Summary of contents

Page 1

... Offered in JEDEC-standard 100-pin TQFP package • “ZZ” Sleep Mode option Functional Description [1] The CY7C1324F is a 131,072 x 18 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is Logic Block Diagram ADDRESS ...

Page 2

... Maximum Access Time Maximum Operating Current Maximum Standby Current Pin Configurations DDQ DDQ BYTE DDQ DQP DDQ Document #: 38-05431 Rev. ** 133 MHz 117 MHz 6.5 7.5 225 220 40 40 100-Pin TQFP CY7C1324F CY7C1324F Unit DDQ DQP DDQ BYTE DDQ DDQ Page [+] Feedback ...

Page 3

... Read cycle. The direction of the pins is controlled When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs and DQP are placed in a three-state condition. [A:B] Power supply inputs to the core of the device. Ground for the device. CY7C1324F , CE , and ...

Page 4

... Maximum access delay from the clock rise ( 6.5 ns (133-MHz device). CDV The CY7C1324F supports secondary cache in systems utilizing either a linear or interleaved burst sequence. The interleaved burst order supports Pentium and i486™ processors. The linear burst sequence is suited for processors that utilize a linear burst sequence ...

Page 5

... CE ZZ ADSP ADSC and BWE = L or GW= L. WRITE = H when all Byte Write Enable signals ( CY7C1324F Third Fourth Address Address , Min. Max. Unit CYC 2t ns CYC 2t ns CYC 0 ns ADV WE OE CLK L-H Three-State L-H Three-State L-H Three-State L-H Three-State L-H Three-State ...

Page 6

... Truth Table for Read/Write [2, 3] Function Read Read Write Byte (A, DQP ) A Write Byte (B, DQP ) B Write All Bytes Write All Bytes Document #: 38-05431 Rev ADSP ADSC BWE CY7C1324F ADV WE OE CLK L L-H Three-State L L-H Three-State L L-H Three-State L-H Three-State L L-H Three-State L L Page [+] Feedback ...

Page 7

... CYC IL (min.) within 200 ms. During this time V < V and CY7C1324F Ambient ] Temperature DDQ 0°C to +70°C 3.3V 3.3V –5% −5%/+10 –40°C to +85°C CY7C1324F Min. Max. Unit 3.135 3.6 V 3.135 3.6 V 2.4 V 0 –0.3 0.8 V −5 µ ...

Page 8

... V and t is less than t to eliminate bus contention between SRAMs when sharing the same OELZ CHZ CLZ CY7C1324F TQFP Package Unit °C/W 41.83 °C/W 9.99 Max. Unit ...

Page 9

... CEH Document #: 38-05431 Rev. ** [9, 10] 133 MHz 117 MHz Min. Max. Min. 1.5 2.0 1.5 2.0 1.5 2.0 1.5 2.0 1.5 2.0 1.5 2.0 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 CY7C1324F Max. Unit Page [+] Feedback ...

Page 10

... ADVS ADVH ADV suspends burst. t CDV t OELZ t DOH Q(A2 BURST READ DON’T CARE UNDEFINED is HIGH and CE is LOW. When CE is HIGH CY7C1324F Deselect Cycle t CHZ Q( Q(A2 Burst wraps around to its initial state is HIGH LOW HIGH Page [+] Feedback ...

Page 11

... Full width Write can be initiated by either GW LOW HIGH, BWE LOW and BW Document #: 38-05431 Rev WEH WES ADV suspends burst. D(A2 BURST WRITE DON’T CARE UNDEFINED LOW [A:B] CY7C1324F ADSC extends burst. t ADS t ADH A3 t WES t WEH t ADVS t ADVH D( D(A3 Extended BURST WRITE Page [+] Feedback ...

Page 12

... The data bus (Q) remains in High-Z following a Write cycle unless an ADSP , ADSC , or ADV cycle is performed. 18 HIGH. Document #: 38-05431 Rev WES WEH OELZ D(A3) t CDV Q(A4) Q(A4+1) Single WRITE BURST READ DON’T CARE UNDEFINED CY7C1324F A5 A6 D(A5) D(A6) Q(A4+2) Q(A4+3) Back-to-Back WRITEs Page [+] Feedback ...

Page 13

... Ordering Information Speed (MHz) Ordering Code 133 CY7C1324F-133AC 117 CY7C1324F-117AC CY7C1324F-117AI Notes: 19. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device. 20. DQs are in High-Z when exiting ZZ sleep mode. Document #: 38-05431 Rev. ** High-Z DON’ ...

Page 14

... Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. DIMENSIONS ARE IN MILLIMETERS 0.30±0.08 0.65 12°±1° TYP. (8X STAND-OFF 0.05 MIN. SEATING PLANE 0.15 MAX. CY7C1324F 1.40±0.05 A SEE DETAIL 0.20 MAX. 1.60 MAX. 51-85050-*A Page [+] Feedback ...

Page 15

... Document History Page Document Title: CY7C1324F 2-Mb (128K x 18) Flow-Through Sync SRAM Document Number: 38-05431 REV. ECN NO. Issue Date ** 200780 See ECN Document #: 38-05431 Rev. ** Orig. of Change Description of Change NJY New Data Sheet CY7C1324F Page [+] Feedback ...

Related keywords