BDP954E6327 Infineon Technologies, BDP954E6327 Datasheet - Page 3

• Manufacturer Part Number: BDP954E6327
• Manufacturer: Infineon Technologies

Specifications of BDP954E6327

• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 100V
• Collector-base Voltage: 120V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 3A
• Dc Current Gain (min): 25
• Power Dissipation: 5W
• Frequency (max): 100MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / Rohs Status: Compliant

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
I
I
Collector-base breakdown voltage
I
I
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
Emitter-base cutoff current
V
DC current gain
I
I
I
BDP954
I
Collector-emitter saturation voltage
I
Base emitter saturation voltage
I
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
1
C
C
C
C
C
C
E
C
C
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
CB
CB
EB
CB
= 10 µA, I
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 100 µA, I
= 100 µA, I
= 100 µA, I
= 10 mA, V
= 500 mA, V
= 1 A, V
= 1 A, V
= 2 A, I
= 2 A, I
= 50 mA, V
= 4 V, I
= 45 V, I
= 45 V, I
= 10 V, f = 100 MHz
B
B
CE
CE
= 0.2 A
= 0.2 A
C
C
B
B
B
E
E
E
E
E
= 0
CE
CE
= 2 V BDP948,BDP950
= 2 V
= 0
= 0 , BDP948
= 0 , BDP950
= 0 , BDP954
= 0
= 0 , T
CE
= 0 , BDP948
= 0 , BDP950
= 0 , BDP954
1)
= 5 V
= 10 V, f = 100 MHz
= 1 V
A
= 150 °C
1)
A
= 25°C, unless otherwise specified
1)
3
f
C
Symbol
V
V
V
I
I
h
V
V
T
CBO
EBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
cb
BDP948, BDP950, BDP954
min.
100
120
45
60
45
60
25
85
50
15
5
-
-
-
-
-
-
-
Values
typ.
100
40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
max.
475
100
0.1
0.5
1.3
20
2008-10-10
-
-
-
-
-
-
-
-
-
-
-
-
MHz
pF
Unit
V
µA
nA
-
V