MTDF1P02HDR2 ON Semiconductor, MTDF1P02HDR2 Datasheet - Page 6

• Manufacturer Part Number: MTDF1P02HDR2
• Manufacturer: ON Semiconductor

Specifications of MTDF1P02HDR2

• Number Of Elements: 2
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / Rohs Status: Not Compliant

are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse
recovery characteristics which play a major role in
determining switching losses, radiated noise, EMI and RFI.
the body diode itself. The body diode is a minority carrier
device, therefore it has a finite reverse recovery time, t rr , due
to the storage of minority carrier charge, Q RR , as shown in
the typical reverse recovery wave form of Figure 13. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery
further increases switching losses. Therefore, one would
like a diode with short t rr and low Q RR specifications to
minimize these losses.
amount of radiated noise, voltage spikes, and current
ringing. The mechanisms at work are finite irremovable
circuit parasitic inductances and capacitances acted upon by
The switching characteristics of a MOSFET body diode
System switching losses are largely due to the nature of
The abruptness of diode reverse recovery effects the
Drain–to–Source Voltage versus Total Charge
Figure 10. Gate–to–Source and
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
Figure 12. Diode Forward Voltage versus Current
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MTDF1P02HD
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high di/dts. The diode’s negative di/dt during t a is directly
controlled by the device clearing the stored charge.
However, the positive di/dt during t b is an uncontrollable
diode characteristic and is usually the culprit that induces
current ringing. Therefore, when comparing diodes, the
ratio of t b /t a serves as a good indicator of recovery
abruptness and thus gives a comparative estimate of
probable noise generated. A ratio of 1 is considered ideal and
values less than 0.5 are considered snappy.
low voltage MOSFETs, high cell density MOSFET diodes
are faster (shorter t rr ), have less stored charge and a softer
reverse recovery characteristic. The softness advantage of
the high cell density diode means they can be forced through
reverse recovery at a higher di/dt than a standard cell
MOSFET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter
recovery time and lower switching losses.
Compared to ON Semiconductor standard cell density
Figure 11. Resistive Switching Time Variation
versus Gate Resistance