M29F400BB70M1 Micron Technology Inc, M29F400BB70M1 Datasheet

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M29F400BB70M1

Manufacturer Part Number
M29F400BB70M1
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of M29F400BB70M1

Lead Free Status / Rohs Status
Not Compliant

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M29F400BB70M1
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M29F400BB70M1
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M29F400BB70M1
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Features
March 2007
Single 5 V ± 10% supply voltage for program,
erase and read operations
Access time: 45 ns
Programming time
– 8 µs per Byte/Word typical
11 memory blocks
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 8 Main Blocks
Program/erase controller
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
Erase Suspend and Resume modes
– Read and Program another Block during
Unlock Bypass Program command
– Faster Production/Batch Programming
Temporary block unprotection mode
Low power consumption
– Standby and Automatic Standby
100,000 program/erase cycles per block
20-year data retention
– Defectivity below 1 ppm/year
algorithm
Erase Suspend
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)
Rev 5
Electronic signature
– Manufacturer Code: 0020h
– Top Device Code M29F400BT: 00D5h
– Bottom Device Code M29F400BB: 00D6h
ECOPACK
single supply Flash memory
®
packages available
44
TSOP48 (N)
12 x 20mm
SO44 (M)
1
M29F400BB
M29F400BT
www.st.com
1/40
1

Related parts for M29F400BB70M1

M29F400BB70M1 Summary of contents

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... Defectivity below 1 ppm/year March 2007 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory Electronic signature – Manufacturer Code: 0020h – Top Device Code M29F400BT: 00D5h – Bottom Device Code M29F400BB: 00D6h ...

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Contents Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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M29F400BT, M29F400BB 4.6 Unlock Bypass Reset command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.7 ...

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List of tables List of tables Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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M29F400BT, M29F400BB List of figures Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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Description 1 Description The M29F400B Mbit (512 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults ...

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M29F400BT, M29F400BB Figure 1. Logic diagram Table 1. Signal names A0-A17 DQ0-DQ7 DQ8-DQ14 DQ15A– BYTE A0-A17 W M29F400BT E M29F400BB Address Inputs ...

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Description Figure 2. TSOP connections 8/40 A15 1 48 A14 A13 A12 A11 A10 M29F400BT M29F400BB A17 ...

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M29F400BT, M29F400BB Figure 3. SO connections A17 M29F400BT ...

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Signal descriptions 2 Signal descriptions See Figure 1., Logic Diagram, and connected to this device. 2.1 Address inputs (A0-A17) The Address Inputs select the cells in the memory array to access during Bus Read operations. During Bus Write operations they ...

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M29F400BT, M29F400BB 2.7 Write Enable (W) The Write Enable, W, controls the Bus Write operation of the memory’s Command Interface. 2.8 Reset/Block Temporary Unprotect (RP) The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the ...

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Signal descriptions 2.11 V supply voltage CC The V Supply Voltage supplies the power for all operations (Read, Program, Erase etc.). CC The Command Interface is disabled when the V Voltage This prevents Bus Write operations from accidentally ...

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M29F400BT, M29F400BB 3 Bus operations There are five standard bus operations that control the device. These are Bus Read, Bus Write, Output Disable, Standby and Automatic Standby. See Operations, for a summary. Typically glitches of less than 5ns on Chip ...

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... There are two methods available for protecting and unprotecting the blocks, one for use on programming equipment and the other for in-system use. For further information refer to Application Note AN1122, Applying Protection and Unprotection to M29 Series Flash. Table 2. Bus operations, BYTE = V ...

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M29F400BT, M29F400BB Table 3. Bus operations, BYTE = V Operation Bus Read Bus Write Output Disable Standby Read Manufacturer Code Read Device Code (1) IH Address Inputs A0-A17 ...

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Command interface 4 Command interface All Bus Write operations to the memory are interpreted by the Command Interface. Commands consist of one or more sequential Bus Write operations. Failure to observe a valid sequence of Bus Write operations will result ...

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M29F400BT, M29F400BB 4.3 Program command The Program command can be used to program a value to one address in the memory array at a time. The command requires four Bus Write operations, the final write operation latches the address and ...

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Command interface 4.7 Chip Erase command The Chip Erase command can be used to erase the entire chip. Six Bus Write operations are required to issue the Chip Erase Command and start the Program/Erase Controller. If any blocks are protected ...

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M29F400BT, M29F400BB 4.9 Erase Suspend command The Erase Suspend Command may be used to temporarily suspend a Block Erase operation and return the memory to Read mode. The command requires one Bus Write operation. The Program/Erase Controller will suspend within ...

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Command interface Table 5. Commands, 8-bit mode, BYTE = V Command Read/Reset Auto Select Program Unlock Bypass Unlock Bypass Program Unlock Bypass Reset Chip Erase Block Erase 6+ AAA Erase Suspend Erase Resume Don’t Care ...

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M29F400BT, M29F400BB 4.14 Unlock Bypass After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands. 4.15 Unlock Bypass Reset After the Unlock Bypass Reset command read the memory as normal until another command is issued. 4.16 ...

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Status Register 5 Status Register Bus Read operations from any address always read the Status Register during Program and Erase operations also read during Erase Suspend when an address within a block being erased is accessed. The bits ...

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M29F400BT, M29F400BB 5.3 Error Bit (DQ5) The Error Bit can be used to identify errors detected by the Program/Erase Controller. The Error Bit is set to ’1’ when a Program, Block Erase or Chip Erase operation fails to write the ...

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Status Register Table 6. Status Register bits Operation Program Program During Erase Suspend Program Error Chip Erase Block Erase before timeout Block Erase Erase Suspend Erase Error 1. Unspecified data bits should be ignored. Figure 4. Data polling flowchart 24/40 ...

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M29F400BT, M29F400BB Figure 5. Data toggle flowchart START READ DQ5 & DQ6 READ DQ6 DQ6 NO = TOGGLE YES NO DQ5 = 1 YES READ DQ6 TWICE DQ6 NO = TOGGLE YES FAIL PASS AI01370B Status Register 25/40 ...

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Maximum rating 6 Maximum rating Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other ...

Page 27

M29F400BT, M29F400BB 7 Program and erase times and endurance cycles The Program and Erase times and the number of Program/ Erase cycles per block are shown in Table 8. Exact erase times may change depending on the memory array condition. ...

Page 28

DC and AC parameters 8 DC and AC parameters This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests ...

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M29F400BT, M29F400BB Figure 7. AC testing load circuit Table 10. Capacitance Symbol C Input Capacitance IN C Output Capacitance OUT ° MHz A 2. Sampled only, not 100% tested. 1.3V 1N914 3.3k DEVICE ...

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DC and AC parameters Table 11. DC characteristics Symbol I Input Leakage Current LI I Output Leakage Current LO I Supply Current (Read) CC1 Supply Current (Standby) I CC2 TTL Supply Current (Standby) I CC3 CMOS Supply Current (3) I ...

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M29F400BT, M29F400BB Figure 8. Read mode AC waveforms A0-A17/ A– DQ0-DQ7/ DQ8-DQ15 BYTE tELBL/tELBH Table 12. Read AC characteristics Symbol Alt Address Valid to Next Address t t AVAV RC Valid t t Address Valid to Output Valid ...

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DC and AC parameters Figure 9. Write AC waveforms, Write Enable controlled A0-A17/ A– DQ0-DQ7/ DQ8-DQ15 Table 13. Write AC characteristics, Write Enable controlled Symbol Alt t t AVAV ELWL CS ...

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M29F400BT, M29F400BB Figure 10. Write AC waveforms, Chip Enable controlled A0-A17/ A– DQ0-DQ7/ DQ8-DQ15 Table 14. Write AC characteristics, Chip Enable controlled Symbol Alt t t AVAV WLEL ...

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DC and AC parameters Figure 11. Reset/Block Temporary Unprotect AC waveforms Table 15. Reset/Block Temporary Unprotect AC characteristics Symbol Alt (2) t PHWL t t PHEL RH (2) t PHGL (2) t RHWL (2) t ...

Page 35

M29F400BT, M29F400BB 9 Package mechanical Figure 12. TSOP48 - 48 lead Plastic Thin Small Outline 20mm, package outline DIE 1. Drawing is not to scale. Table 16. TSOP48 - 48 lead Plastic Thin Small Outline, ...

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Package mechanical Figure 13. SO44 - 44 lead Plastic Small Outline, 500 mils body width, package outline 44 1 SO-F 1. Drawing is not to scale. Table 17. SO44 - 44 lead Plastic Small Outline, 500 mils body width, package ...

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M29F400BT, M29F400BB 10 Part numbering Table 18. Ordering information scheme Example: Device Type M29 Operating Voltage ± 10% CC Device Function 400B = 4 Mbit (512Kb x8 or 256Kb x16), Boot Block Array Matrix T ...

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Block address tables Appendix A Block address tables Table 19. Top boot block addresses, M29F400BT Size # (Kbytes ...

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M29F400BT, M29F400BB Revision history Table 21. Document revision history Date July 1999 09/21/99 10/04/99 07/28/00 19-Sep-2005 20-Jul-2006 12-Dec-2006 22-Mar-2007 Revision First Issue Chip Erase Max. specification added Block Erase Max. specification added Program Max. specification added Chip Program Max. specification ...

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Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any ...

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