AM29DL324GB-70EI Spansion Inc., AM29DL324GB-70EI Datasheet - Page 30

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AM29DL324GB-70EI

Manufacturer Part Number
AM29DL324GB-70EI
Description
Manufacturer
Spansion Inc.
Datasheet

Specifications of AM29DL324GB-70EI

Cell Type
NOR
Density
32Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
22/21Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
3/8.5 to 9.5V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
4M/2M
Supply Current
16mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant
After an erase-suspended program operation is com-
plete, the bank returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard Byte Program operation.
Refer to the Write Operation Status section for more
information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
Autoselect Mode and Autoselect Command Sequence
sections for details.
To resume the sector erase operation, the system
must write the Erase Resume command. The bank
address of the erase-suspended bank is required
when writing this command. Further writes of the Re-
sume command are ignored. Another Erase Suspend
command can be written after the chip has resumed
erasing.
28
D A T A
Am29DL32xG
S H E E T
Notes:
1. See Table 14 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
No
Figure 4. Erase Operation
Command Sequence
Data Poll to Erasing
Erasure Completed
Bank from System
Write Erase
Data = FFh?
(Notes 1, 2)
START
Yes
25686B10 December 4, 2006
Embedded
Erase
algorithm
in progress

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