AM29DL323DB-120EI Spansion Inc., AM29DL323DB-120EI Datasheet

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AM29DL323DB-120EI

Manufacturer Part Number
AM29DL323DB-120EI
Description
Manufacturer
Spansion Inc.
Datasheet

Specifications of AM29DL323DB-120EI

Cell Type
NOR
Density
32Mb
Access Time (max)
120ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
22/21Bit
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
3/8.5 to 9.5V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
4M/2M
Supply Current
16mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AM29DL323DB-120EI
Manufacturer:
AMD
Quantity:
20 000
This product has been retired and is not available for designs. For new and current designs involving TSOP pack-
ages, S29JL032H supersedes Am29DL32xD and is the factory-recommended migration path. Please refer to the
S29JL032H Datasheet for specifications and ordering information.
For new and current designs involving Fine-pitch BGA (FBGA) packages, S29PL032J supersedes Am29DL32xD
and is the factory-recommended migration path. Please refer to the S29PL032J Datasheet for specifications and
ordering information. Availability of this document is retained for reference and historical purposes only.
Data Sheet
July 2003
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that orig-
inally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appropriate,
and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order
these products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Publication Number 21534 Revision D Amendment +8 Issue Date December 13, 2005

Related parts for AM29DL323DB-120EI

AM29DL323DB-120EI Summary of contents

Page 1

Data Sheet This product has been retired and is not available for designs. For new and current designs involving TSOP pack- ages, S29JL032H supersedes Am29DL32xD and is the factory-recommended migration path. Please refer to the S29JL032H Datasheet for specifications and ...

Page 2

... SOFTWARE FEATURES ■ Data Management Software (DMS) — AMD-supplied software manages data programming, enabling EEPROM emulation — Eases historical sector erase flash limitations ■ Supports Common Flash Memory Interface (CFI) ■ Erase Suspend/Erase Resume — Suspends erase operations to allow programming in same bank ■ ...

Page 3

... Flash memory device (or memory de- vices), and more. Using DMS, user-written software does not need to interface with the Flash memory di- rectly. Instead, the user's software accesses the Flash memory by calling one of only six functions. AMD pro- vides this software to simplify system design and software integration efforts ...

Page 4

... Figure 1. Temporary Sector Unprotect Operation................................. 19 Figure 2. In-System Sector Protection/ Sector Unprotection Algorithms ............................................................ 20 TM SecSi (Secured Silicon) Sector Flash Memory Region ..................................................................21 Hardware Data Protection ............................................................22 Common Flash Memory Interface (CFI Command Definitions . . . . . . . . . . . . . . . . . . . . . . 25 Reading Array Data ......................................................................25 Reset Command ..........................................................................26 Autoselect Command Sequence ..................................................26 TM Enter SecSi Sector/Exit SecSi Sector Command Sequence ...

Page 5

PRODUCT SELECTOR GUIDE Part Number Regulated Voltage Range: V Speed Option Standard Voltage Range: V Max Access Time (ns) CE# Access (ns) OE# Access (ns) BLOCK DIAGRAM A20–A0 RY/BY# A20–A0 RESET# STATE CONTROL WE# & CE# ...

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CONNECTION DIAGRAMS A15 1 A14 2 A13 3 A12 4 A11 5 6 A10 A19 A20 10 WE# 11 RESET WP#/ACC 14 RY/BY# 15 A18 16 A17 ...

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... V = Device Ground Pin Not Connected Internally 6 Flash memory devices in FBGA packages may be damaged if exposed to ultrasonic cleaning methods. The package and/or data integrity may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time. LOGIC SYMBOL 21 A0–A20 ...

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... Valid Combinations for FBGA Packages Order Number AM29DL322DT70R, EI, EIN AM29DL322DB70R AM29DL323DT70R, AM29DL323DB70R AM29DL324DT70R, AM29DL324DB70R AM29DL322DT90, AM29DL322DB90 AM29DL323DT90, AM29DL323DB90 AM29DL324DT90, AM29DL324DB90 AM29DL322DT120, AM29DL322DB120 AM29DL323DT120, AM29DL323DB120 AM29DL324DT120, AM29DL324DB120 Am29DL322D/323D/324D Package Marking D322DT70R, D322DB70R D323DT70R, ...

Page 9

DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory loca- tion. The register is a latch ...

Page 10

... I in the DC Characteristics table represents the CC3 standby current specification. Automatic Sleep Mode The automatic sleep mode minimizes Flash device en- ergy consumption. The device automatically enables this mode when addresses remain stable for t Am29DL322D/323D/324D in the DC Characteristics table ± 0 ...

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... Am29DL324D 16 Mbit 10 The RESET# pin may be tied to the system reset cir- cuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firm- ware from the Flash memory. If RESET# is asserted during a program or erase op- eration, the RY/BY# pin remains a “0” (busy) until the ...

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Sector Address Sector SA0 000000xxx SA1 000001xxx SA2 000010xxx SA3 000011xxx SA4 000100xxx SA5 000101xxx SA6 000110xxx SA7 000111xxx SA8 001000xxx SA9 001001xxx SA10 001010xxx SA11 001011xxx SA12 001100xxx SA13 001101xxx SA14 001110xxx SA15 001111xxx SA16 010000xxx SA17 010001xxx SA18 ...

Page 13

Table 3. Top Boot Sector Addresses (Continued) Sector Address Sector SA48 110000xxx SA49 110001xxx SA50 110010xxx SA51 110011xxx SA52 110100xxx SA53 110101xxx SA54 110110xxx SA55 110111xxx SA56 111000xxx SA57 111001xxx SA58 111010xxx SA59 111011xxx SA60 111100xxx SA61 111101xxx SA62 111110xxx ...

Page 14

December 13, 2005 Am29DL322D/323D/324D 13 ...

Page 15

Table 5. Bottom Boot Sector Addresses Sector Address Sector SA0 000000000 SA1 000000001 SA2 000000010 SA3 000000011 SA4 000000100 SA5 000000101 SA6 000000110 SA7 000000111 SA8 000001xxx SA9 000010xxx SA10 000011xxx SA11 000100xxx SA12 000101xxx SA13 000110xxx SA14 000111xxx SA15 ...

Page 16

... SA67 111100xxx SA68 111101xxx SA69 111110xxx SA70 111111xxx Note: The address range is A20:A-1 in byte mode (BYTE#=V are A20–A18 for Am29DL322DB, A20 and A19 for Am29DL323DB, and A20 for Am29DL324DB. Table 6. Device Am29DL322DB, Am29DL323DB , Am29DL324DB December 13, 2005 Sector Size A20–A12 ...

Page 17

Autoselect Mode The autoselect mode provides manufacturer and de- vice identification, and sector protection verification, through identifier codes output on DQ7–DQ0. This mode is primarily intended for programming equip ...

Page 18

Sector/Sector Block Protection and Unprotection (Note: For the following discussion, the term “sector” applies to both sectors and sector blocks. A sector block consists of two or more adjacent sectors that are protected or unprotected at the same time (see ...

Page 19

... V on address pin A9 and OE#. ID This method is compatible with programmer routines written for earlier 3.0 volt-only AMD flash devices. Publication number 22244 contains further details; contact an AMD representative to request a copy. The device is shipped with all sectors unprotected. AMD offers the option of programming and protecting sectors at its factory prior to shipping the device through AMD’ ...

Page 20

START PLSCNT = 1 RESET Wait 1 μs No First Write Temporary Sector Cycle = 60h? Unprotect Mode Yes Set up sector address Sector Protect: Write 60h to sector address with ...

Page 21

... Programmed or Protected At the Factory If the security feature is not required, the SecSi Sector can be treated as an additional Flash memory space, expanding the size of the available Flash array. Cur- rent version of device has 64 Kbytes; future versions will have only 256 bytes. This should be considered during system design ...

Page 22

... Software support can then be device-inde- pendent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors can standardize their existing CC interfaces for long-term compatibility. This device enters the CFI Query mode when the sys- tem writes the CFI Query command, 98h, to address ...

Page 23

... Max. timeout for full chip erase 2 Table 12. Device Geometry Definition Data N 0016h Device Size = 2 byte 0000h Flash Device Interface description (refer to CFI publication 100) 0000h 0000h Max. number of bytes in multi-byte write = 2 0000h (00h = not supported) 0002h Number of Erase Block Regions within device ...

Page 24

December 13, 2005 003Eh 0000h Erase Block Region 2 Information 0000h 0001h 0000h 0000h Erase Block ...

Page 25

Table 13. Primary Vendor-Specific Extended Query Addresses Addresses (Word Mode) (Byte Mode) 40h 80h 41h 82h 42h 84h 43h 86h 44h 88h 45h 8Ah 46h 8Ch 47h 8Eh 48h 90h 49h 92h 4Ah 94h 4Bh 96h 4Ch 98h 4Dh 9Ah ...

Page 26

See the Erase Suspend/Erase Resume Commands sec- tion for more information. The system must issue the reset command to return a bank to the read (or erase-suspend-read) mode if DQ5 goes high ...

Page 27

Table 14 shows the address and data requirements for the byte program command sequence. When the Embedded Program algorithm is complete, that bank then returns to the read mode and ...

Page 28

The system is not required to provide any con- trols or timings during these operations. Table 14 shows the address and data requirements for the chip erase command sequence. ...

Page 29

DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to the Write Operation Status section for infor- mation on these status bits. After an erase-suspended program operation is com- ...

Page 30

Command Sequence (Note 1) Addr Read (Note 6) 1 Reset (Note 7) 1 XXX Word 555 Manufacturer ID 4 Byte AAA Word 555 Device ID 4 Byte AAA TM SecSi Sector Word 555 Factory Protect (Note 4 Byte AAA 9) ...

Page 31

WRITE OPERATION STATUS The device provides several bits to determine the status of a program or erase operation: DQ2, DQ3, DQ5, DQ6, and DQ7. Table 15 and the following subsections describe the function of these bits. DQ7 and DQ6 each ...

Page 32

RY/BY#: Ready/Busy# The RY/BY dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since ...

Page 33

DQ2: Toggle Bit II The “Toggle Bit II” on DQ2, when used with DQ6, indi- cates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit ...

Page 34

Status Embedded Program Algorithm Standard Mode Embedded Erase Algorithm Erase Suspended Sector Erase-Suspend- Erase Read Suspend Non-Erase Mode Suspended Sector Erase-Suspend-Program Notes: 1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing ...

Page 35

ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C Ambient Temperature with Power Applied ...

Page 36

DC CHARACTERISTICS CMOS Compatible Parameter Symbol Parameter Description I Input Load Current Input Load Current LIT I Output Leakage Current LO V Active Read Current CC I CC1 (Notes Active Write Current (Notes ...

Page 37

... DC CHARACTERISTICS Zero-Power Flash 500 1000 Note: Addresses are switching at 1 MHz Figure 9. I Current vs. Time (Showing Active and Automatic Sleep Currents) CC1 Note °C 36 1500 2000 2500 Time Frequency in MHz Figure 10. Typical I vs. Frequency CC1 Am29DL322D/323D/324D 3000 3500 4000 3.6 V 2.7 V ...

Page 38

TEST CONDITIONS Device Under Test C 6.2 kΩ L Note: Diodes are IN3064 or equivalent Figure 11. Test Setup KEY TO SWITCHING WAVEFORMS WAVEFORM Don’t Care, Any Change Permitted 3.0 V 1.5 V Input 0.0 V Figure 12. Input Waveforms ...

Page 39

AC CHARACTERISTICS Read-Only Operations Parameter JEDEC Std. Description t t Read Cycle Time (Note 1) AVAV Address to Output Delay AVQV ACC t t Chip Enable to Output Delay ELQV Output Enable to Output ...

Page 40

AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std RESET# Pin Low (During Embedded Algorithms) t Ready to Read Mode (See Note) RESET# Pin Low (NOT During Embedded t Ready Algorithms) to Read Mode (See Note) t RESET# Pulse Width RP ...

Page 41

AC CHARACTERISTICS Word/Byte Configuration (BYTE#) Parameter JEDEC Std Description t /t CE# to BYTE# Switching Low or High ELFL ELFH t BYTE# Switching Low to Output HIGH Z FLQZ t BYTE# Switching High to Output Active FHQV CE# OE# BYTE# ...

Page 42

AC CHARACTERISTICS Erase and Program Operations Parameter JEDEC Std Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVWL AS t Address Setup Time to OE# low during toggle bit polling ASO t t ...

Page 43

AC CHARACTERISTICS Program Command Sequence (last two cycles Addresses 555h CE# OE# WE Data RY/BY VCS Notes program address program data Illustration shows device in word ...

Page 44

AC CHARACTERISTICS Erase Command Sequence (last two cycles Addresses 2AAh CE Data 55h RY/BY# t VCS V CC Notes sector address (for Sector Erase Valid ...

Page 45

AC CHARACTERISTICS t WC Valid PA Addresses t AH CE# OE WE# t WPH Valid Data In WE# Controlled Write Cycle Figure 20. Back-to-back Read/Write Cycle Timings t RC Addresses VA t ACC t ...

Page 46

AC CHARACTERISTICS Addresses CE# t OEH WE# OE Valid Data DQ6/DQ2 RY/BY# Note Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read ...

Page 47

AC CHARACTERISTICS Temporary Sector Unprotect Parameter JEDEC Std Description t V Rise and Fall Time (See Note) VIDR Rise and Fall Time (See Note) VHH HH RESET# Setup Time for Temporary Sector t RSP Unprotect RESET# Hold ...

Page 48

AC CHARACTERISTICS RESET# SA, A6, A1, A0 Sector/Sector Block Protect or Unprotect Data 60h 1 µs CE# WE# OE# * For sector protect For sector unprotect, A6 ...

Page 49

AC CHARACTERISTICS Alternate CE# Controlled Erase and Program Operations Parameter JEDEC Std Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVWL Address Hold Time ELAX Data Setup ...

Page 50

AC CHARACTERISTICS 555 for program 2AA for erase Addresses WE# OE# CE Data t RH RESET# RY/BY# Notes: 1. Figure indicates last two bus cycles of a program or erase operation ...

Page 51

ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Chip Erase Time Byte Program Time Accelerated Byte/Word Program Time Word Program Time Byte Mode Chip Program Time (Note 3) Word Mode Notes: 1. Typical program and erase times assume the following ...

Page 52

PHYSICAL DIMENSIONS FBD063—63-ball Fine-Pitch Ball Grid Array (FBGA December 13, 2005 Am29DL322D/323D/324D Dwg rev AF; 10/99 51 ...

Page 53

PHYSICAL DIMENSIONS TS 048—48-Pin Standard TSOP 52 Am29DL322D/323D/324D Dwg rev AA; 10/99 December 13, 2005 ...

Page 54

... Voltage Range: V 70R speed option. Ordering Information Reverted FBGA designator to WD. Secured Silicon (SecSi) Sector Flash Memory Region Factory Locked: SecSi Sector Programmed and Pro- tected at the Factory: Corrected the address range of the ESN and distinguished between word and byte modes. ...

Page 55

... Clarified that current version of device has 64 Kbyte SecSi Sector; future versions will have 256 bytes. Ordering Information Added valid combinations for “N” designator. Common Flash Memory Interface (CFI) Modified first paragraph to indicate that the CFI Query is not accessible when the device is executing an Em- bedded Algorithm. ...

Page 56

... Copyright © 2004-2005 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. ...

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