PUMD13 NXP Semiconductors, PUMD13 Datasheet - Page 3

PUMD13

Manufacturer Part Number
PUMD13
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUMD13

Transistor Polarity
NPN/PNP
Collector-emitter Voltage
50V
Dc Current Gain (min)
100
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SOT-363
Lead Free Status / Rohs Status
Compliant

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ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
2003 Oct 08
PEMD13
PUMD13
Per transistor; for the PNP transistor with negative polarity
V
V
V
V
V
I
I
P
T
T
T
Per device
P
O
CM
SYMBOL
stg
j
amb
CBO
CEO
EBO
I
I
tot
tot
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩ
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage TR1
input voltage TR2
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
total power dissipation
positive
negative
positive
negative
SOT363
SOT666
SOT363
SOT666
PARAMETER
NAME
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
open emitter
open base
open collector
T
note 1
notes 1 and 2
T
note 1
notes 1 and 2
amb
amb
≤ 25 °C
≤ 25 °C
3
CONDITIONS
PACKAGE
DESCRIPTION
−65
−65
PEMD13; PUMD13
MIN.
50
50
10
+30
−5
+5
−30
100
100
200
200
+150
150
+150
300
300
MAX.
Product data sheet
VERSION
SOT666
SOT363
V
V
V
V
V
V
V
mA
mA
mW
mW
°C
°C
°C
mW
mW
UNIT

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