SI4340DY-T1 Vishay, SI4340DY-T1 Datasheet
SI4340DY-T1
Specifications of SI4340DY-T1
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SI4340DY-T1 Summary of contents
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... Steady-State Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72376 S-32273—Rev. B, 03-Nov-03 New Product ( 4 4 ( Si4340DY-T1 (with Tape and Reel) = 25_C UNLESS OTHERWISE NOTED) A Channel-1 10 secs Steady State Symbol " 25_C 9 70_C 7 ...
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... Si4340DY Vishay Siliconix MOSFET SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate Threshold Voltage Gate Body Leakage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current State Drain Current On-State Drain Current b b Drain-Source On-State Resistance Drain Source On State Resistance ...
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... Q − Total Gate Charge (nC) g Document Number: 72376 S-32273—Rev. B, 03-Nov-03 New Product 1800 1500 1200 10.4 13.0 Si4340DY Vishay Siliconix CHANNEL-1 Transfer Characteristics 125_C C 10 25_C −55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V − Gate-to-Source Voltage (V) ...
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... Si4340DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.0 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0 −0.0 −0.2 −0.4 −0.6 −0.8 −50 − − Temperature (_C) J www.vishay.com 4 New Product 0.040 0.035 0.030 0.025 ...
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... Single Pulse 0.01 −4 − Document Number: 72376 S-32273—Rev. B, 03-Nov-03 New Product −2 − Square Wave Pulse Duration (sec) −2 − Square Wave Pulse Duration (sec) Si4340DY Vishay Siliconix CHANNEL-1 Notes Duty Cycle Per Unit Base = R = 92_C/W thJA ( − T ...
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... Si4340DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics thru − Drain-to-Source Voltage (V) DS On-Resistance vs. Drain Current 0.015 0.012 0.009 0.006 0.003 0.000 − Drain Current (A) D Gate Charge 13 − Total Gate Charge (nC) g www.vishay.com 6 New Product 3000 2500 ...
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... 100 125 150 Safe Operating Area, Junction-to-Case 100 DS(on 0 25_C C Single Pulse 0.01 0 − Drain-to-Source Voltage (V) DS Si4340DY Vishay Siliconix CHANNEL-2 On-Resistance vs. Gate-to-Source Voltage − Gate-to-Source Voltage (V) GS Single Pulse Power 200 160 120 0.001 0.01 0.1 1 Time (sec) ...
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... Si4340DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0 ...
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... V − Reverse Voltage (V KA Normalized Thermal Transient Impedance, Junction-to-Ambient −2 − Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot −2 10 Square Wave Pulse Duration (sec) Si4340DY Vishay Siliconix SCHOTTKY 24 30 Notes Duty Cycle Per Unit Base = R = 100_C/W thJA (t) 3 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...