FDD6676AS_NL Fairchild Semiconductor, FDD6676AS_NL Datasheet - Page 7

• Manufacturer Part Number: FDD6676AS_NL
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of FDD6676AS_NL

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0057Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 90A
• Power Dissipation: 70W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252AA
• Dc: 06+
• Lead Free Status / Rohs Status: Compliant

Typical Characteristics
Figure 15. Unclamped Inductive Load Test
Figure 17. Gate Charge Test Circuit
Figure 19. Switching Time Test
+
R
-
10V
V
GE
vary t
required peak I
V
V
GS
Drain Current
I
Circuit
R
GS
GS
g(REF
10µF
Same type as
P
V
GEN
0V
Duty Cycle ≤ 0.1%
Pulse Width ≤ 1µs
to obtain
DS
V
tp
V
GS
50kΩ
GS
V
Circuit
AS
DS
1µF
I
AS
0.01Ω
DUT
L
DUT
R
DUT
L
+
-
+
-
+
-
V
V
V
DD
DD
DD
Figure 16. Unclamped Inductive
10V
V
V
V
Figure 18. Gate Charge Waveform
GS
DS
GS
Figure 20. Switching Time Waveforms
0V
0V
10%
Q
t
d(ON)
90%
GS
Waveforms
Charge, (nC)
t
50%
ON
Q
10%
Pulse Width
I
G(TOT)
t
AS
Q
r
GD
t
P
BV
t
AV
DSS
t
)
d(OFF
90%
50%
t
OFF
V
t
10%
FDD6676AS Rev. A1(X)
f
DS
V
90%
DD