JS28F256P30T95 Micron Technology Inc, JS28F256P30T95 Datasheet - Page 51

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JS28F256P30T95

Manufacturer Part Number
JS28F256P30T95
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of JS28F256P30T95

Cell Type
NOR
Density
256Mb
Access Time (max)
95/17ns
Interface Type
Parallel/Serial
Boot Type
Top
Address Bus
24b
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
1.7 to 2/8.5 to 9.5V
Sync/async
Async/Sync
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
2V
Word Size
16b
Number Of Words
16M
Supply Current
28mA
Mounting
Surface Mount
Pin Count
56
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
JS28F256P30T95
Manufacturer:
INTEL
Quantity:
19
Part Number:
JS28F256P30T95
Manufacturer:
INTEL
Quantity:
20 000
P30
Figure 17: Reset Operation Waveforms
12.3
August 2008
Order Number: 306666-12
(A) Reset during
(B) Reset during
(C) Reset during
(D) VCC Power-up to
read mode
program or block erase
P1 ≤ P2
program or block erase
P1 ≥ P2
RST# high
Power Supply Decoupling
Flash memory devices require careful power supply de-coupling. Three basic power
supply current considerations are 1) standby current levels, 2) active current levels,
and 3) transient peaks produced when CE# and OE# are asserted and deasserted.
When the device is accessed, many internal conditions change. Circuits within the
device enable charge-pumps, and internal logic states change at high speed. All of
these internal activities produce transient signals. Transient current magnitudes depend
on the device outputs’ capacitive and inductive loading. Two-line control and correct
de-coupling capacitor selection suppress transient voltage peaks.
Because Numonyx Multi-Level Cell (MLC) flash memory devices draw their power from
VCC, VPP, and VCCQ, each power connection should have a 0.1 µF ceramic capacitor to
ground. High-frequency, inherently low-inductance capacitors should be placed as close
as possible to package leads.
Additionally, for every eight devices used in the system, a 4.7 µF electrolytic capacitor
should be placed between power and ground close to the devices. The bulk capacitor is
meant to overcome voltage droop caused by PCB trace inductance.
RST# [P]
RST# [P]
RST# [P]
V
CC
V
V
V
V
V
V
V
0V
CC
IH
IH
IH
IL
IL
IL
P1
P2
P2
P3
Complete
Abort
Complete
Abort
R5
R5
Datasheet
R5
51

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