BUH2M20AP STMicroelectronics, BUH2M20AP Datasheet
BUH2M20AP
Specifications of BUH2M20AP
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BUH2M20AP Summary of contents
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... EBO I Collector Current C I Collector Peak Current ( Total Dissipation at T tot T Storage Temperature stg T Max. Operating Junction Temperature j September 1998 HIGH VOLTAGE NPN SILICON using INTERNAL SCHEMATIC DIAGRAM = < BUH2M20AP POWER TRANSISTOR TO-220 Value 2000 1200 -65 to 150 150 Unit 1/4 ...
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... BUH2M20AP THERMAL DATA R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO Breakdown Voltage V Emitter-Base Voltage EBO ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain FE C Output Capacitance ob Pulsed: Pulse duration = 300 s, duty cycle 1.5 % ...
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... BUH2M20AP inch MIN. TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 ...
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... BUH2M20AP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...