TC58DVM82A1FT00 Toshiba, TC58DVM82A1FT00 Datasheet - Page 16

• Manufacturer Part Number: TC58DVM82A1FT00
• Manufacturer: Toshiba

Specifications of TC58DVM82A1FT00

• Cell Type: NAND
• Density: 256Mb
• Access Time (max): 35ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 25b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 32M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

Schematic Cell Layout and Address Assignment
An address is read in via the I/O port over three consecutive clock cycles, as shown in Table 1.
65536 pages
2048 blocks
Table 1. Addressing
First cycle
Second cycle
Third cycle
* : A8 is automatically set to Low or High by a 00H command or a 01H command.
The Program operation works on page units while the Erase operation works on block units.
Figure 2. Schematic Cell Layout
512
528
I/O8
A16
A24
A7
16
I/O7
A15
A23
A6
I/O6
A14
A22
A5
8I/O
I/O8
32 pages
1 block
I/O5
A13
A21
A4
I/O1
I/O4
A12
A20
A3
for main memory storage and 16 bytes are for redundancy
or for other uses.
I/O3
A11
A19
A2
A page consists of 528 bytes in which 512 bytes are used
1 page = 528 bytes
1 block = 528 bytes × 32 pages = (16K + 512) bytes
Capacity = 528 bytes × 32 pages × 2048 blocks
I/O2
A10
A18
A1
I/O1
A17
A0
A9
A0~A7:
A9~A24: Page address
A14~A24: Block address
A9~A13: NAND address in block
TC58DVM82A1FT00
Column address
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