TE28F160C3B110 Micron Technology Inc, TE28F160C3B110 Datasheet - Page 10

• Manufacturer Part Number: TE28F160C3B110
• Manufacturer: Micron Technology Inc

Specifications of TE28F160C3B110

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 110ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 20b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 1M
• Supply Current: 18mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

2.2
Figure 1:
2.3
Datasheet
10
A[MAX:MIN]
C3 Flash Memory Device Block Diagram
Input Buffer
V
CCQ
Address
Address
Counter
Block Diagram
Memory Map
The C3 Discrete device is asymmetrically blocked, which enables system code and data
integration within a single flash device. The bulk of the array is divided into 32 Kword
main blocks that can store code or data, and 4 Kword boot blocks to facilitate storage
of boot code or for frequently changing small parameters. See
Memory Map” on page 11
details.
Latch
Y-Decoder
X-Decoder
Reduction
Control
Power
Output Buffer
and
Table 2, “Bottom Boot Memory Map” on page 12
Y-Gating/Sensing
Comparator
DQ
Identifier
Register
Register
Status
Data
0
-DQ
15
Input Buffer
Command
Write State
Interface
Machine
User
Table 1, “Top Boot
I/O Logic
Program/Erase
Voltage Switch
C3 Discrete
March 2008
290645-24
for
CE#
WE#
OE#
RP#
WP#
GND
V
CC
V
PP