MRF9180 Freescale Semiconductor, MRF9180 Datasheet - Page 2

• Manufacturer Part Number: MRF9180
• Manufacturer: Freescale Semiconductor

Specifications of MRF9180

• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 40W
• Power Gain (typ)@vds: 17.5dB
• Frequency (min): 865MHz
• Frequency (max): 895MHz
• Package Type: NI-1230
• Pin Count: 5
• Forward Transconductance (typ): 6S
• Output Capacitance (typ)@vds: 77@26VpF
• Reverse Capacitance (typ): 3.8@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 55%
• Mounting: Screw
• Mode Of Operation: CDMA
• Number Of Elements: 1
• Power Dissipation (max): 388000mW
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

MRF9180R6
2
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests
1. Each side of device measured separately.
2. Measurement made with device in push-pull configuration.
3. Part internally input matched.
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain-Source On-Voltage
Forward Transconductance
Output Capacitance
Reverse Transfer Capacitance
Two-T one Common-Source Amplifier Power Gain
Two-T one Drain Efficiency
3rd Order Intermodulation Distortion
Input Return Loss
Two-T one Common-Source Amplifier Power Gain
Two-T one Drain Efficiency
3rd Order Intermodulation Distortion
Input Return Loss
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
f1 = 880.0 MHz, f2 = 880.1 MHz)
(V
f1 = 880.0 MHz, f2 = 880.1 MHz)
(V
f1 = 880.0 MHz, f2 = 880.1 MHz)
(V
f1 = 880.0 MHz, f2 = 880.1 MHz)
(V
f1 = 865.0 MHz, f2 = 865.1 MHz)
(V
f1 = 865.0 MHz, f2 = 865.1 MHz)
(V
f1 = 865.0 MHz, f2 = 865.1 MHz)
(V
f1 = 865.0 MHz, f2 = 865.1 MHz)
DS
DS
GS
DS
DS
GS
DS
DS
DS
DD
DD
DD
DD
DD
DD
DD
DD
= 65 Vdc, V
= 26 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 26 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
(2)
DS
D
D
D
D
(1)
(In Freescale Test Fixture, 50 ohm system)
GS
GS
out
out
out
out
out
out
out
out
= 300 μAdc)
= 1400 mAdc)
= 6 Adc)
= 2 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 170 W PEP, I
= 170 W PEP, I
= 170 W PEP, I
= 170 W PEP, I
= 170 W PEP, I
= 170 W PEP, I
= 170 W PEP, I
= 170 W PEP, I
(1)
(2)
(1,3)
(1)
Characteristic
(1)
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
(T
= 1400 mA,
= 1400 mA,
= 1400 mA,
= 1400 mA,
= 1400 mA,
= 1400 mA,
= 1400 mA,
= 1400 mA,
C
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
Symbol
V
V
V
I
I
I
DS(on)
C
C
IMD
IMD
GS(th)
GS(Q)
G
G
IRL
IRL
DSS
DSS
GSS
g
oss
η
η
rss
fs
ps
ps
Min
—
—
—
—
—
—
—
—
16
35
—
—
—
—
—
—
2
0.19
17.5
17.5
38.5
Typ
-31
-15
-31
-13
2.9
3.7
3.8
77
39
—
—
—
6
Freescale Semiconductor
Max
-28
0.5
10
-9
—
—
—
—
—
—
—
—
—
—
1
1
4
RF Device Data
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
dB
dB
pF
pF
%
%
S