NE5520379A-T1A-A CALIFORNIA EASTERN LABS, NE5520379A-T1A-A Datasheet

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NE5520379A-T1A-A

Manufacturer Part Number
NE5520379A-T1A-A
Description
Manufacturer
CALIFORNIA EASTERN LABS
Datasheet

Specifications of NE5520379A-T1A-A

Application
L/S
Channel Type
N
Channel Mode
Depletion
Continuous Drain Current
1.5A
Drain Source Voltage (max)
15V
Power Gain (typ)@vds
16@3.2VdB
Frequency (max)
915MHz
Package Type
SMD
Pin Count
4
Forward Transconductance (typ)
2.5S
Operating Temp Range
-65C to 125C
Drain Efficiency (typ)
68%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
20000mW
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
DESCRIPTION
NEC's NE5520379A is an N-Channel silicon power MOSFET
specially designed as the transmission power amplifier for
3.2 V GSM900 handsets. Die are manufactured using NEC's
NEWMOS technology (NEC's 0.6 μm WSi gate lateral MOS-
FET) and housed in a surface mount package. This device
can deliver 35.5 dBm output power at 915 MHz and 3.2 V, or
34.6 dBm output power at 2.8 V by varying the gate voltage
as a power control function.
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE
• HIGH OUTPUT POWER: +35.5 dBm TYP
• HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz
• HIGH POWER ADDED EFFICIENCY: 65% TYP @
• SINGLE SUPPLY: 2.8 to 6.0 V
• CLASS AB OPERATION
• SURFACE MOUNT PACKAGE: 5.7
ELECTRICAL CHARACTERISTICS
Note:
1. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1
V
reject for several samples.
DS
= 3.2 V, f = 915 MHz
SYMBOLS
BV
P
η
P
η
R
I
I
V
GSS
gm
G
η
G
η
DSS
OUT
ADD
OUT
ADD
I
I
TH
D
D
TH
DSS
D
D
L
L
MEDIUM POWER SILICON LD-MOSFET
Output Power
Linear Gain (at P
Drain Efficiency
Power Added Efficiency
Operating Drain Current
Output Power
Linear Gain (at P
Operating Drain Current
Drain Efficiency
Power Added Efficiency
Gate-to-Source Leakage Current
Drain-to-Source Leakage Current
Gate Threshold Voltage
Transconductance
Drain-to-Source Breakdown Voltage
Thermal Resistance
PACKAGE OUTLINE
PART NUMBER
CHARACTERISTICS
IN
IN
= +10 dBm)
= +10 dBm)
x
5.7
NEC'
x
1.1 mm MAX
(T
S
A
= 25°C)
3.2 V, 3 W, L/S BAND
UNITS
°C/W
dBm
dBm
mA
dB
dB
nA
nA
%
%
%
%
V
S
V
A
MIN
31.0
1.0
29
15
NE5520379A
OUTLINE DIMENSIONS
APPLICATIONS
• DIGITAL CELLULAR PHONES:
• OTHERS:
3.2 V GSM900/DCS 1800 Dual Band Handsets
Two-Way Pagers
Retail Business Radio
Special Mobile Radio
Short Range Wireless
35.5
16.0
33.0
1.35
79A
TYP
750
1.0
8.5
2.5
68
65
38
35
20
Gate
California Eastern Laboratories
4.2 MAX.
5.7 MAX.
MAX
Source
100
100
2.0
5
0.4±0.15
PACKAGE OUTLINE 79A
Drain
V
DS
= 3.5 V, I
f = 1785 MHz, V
f = 915 MHz, V
V
TEST CONDITIONS
DS
V
GS
Channel-to-Case
NE5520379A
= 3.5 V, I
I
(Units in mm)
V
V
DSS
= 2.5 V(RF OFF)
DS1 =
V
Gate
GS
DS
(NOTE 1)
(NOTE 1)
GS
= 10 µA
= 6.0 V
= 8.5 V
= 2.5 V
0.8 A, I
(Bottom View)
DS =
DS
1.5±0.2
3.6±0.2
Source
DS
= 3.2 V,
= 3.2 V,
1 mA
DS2 =
0.8 MAX.
Drain
1.0 A

Related parts for NE5520379A-T1A-A

NE5520379A-T1A-A Summary of contents

Page 1

... CLASS AB OPERATION • SURFACE MOUNT PACKAGE: 5.7 DESCRIPTION NEC's NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 μm WSi gate lateral MOS- FET) and housed in a surface mount package ...

Page 2

... Channel Temperature CH T Storage Temperature STG Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Duty Cycle ≤ 50%, Ton ≤ ORDERING INFORMATION PART NUMBER NE5520379A-T1A-A TYPICAL PERFORMANCE CURVES DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 4.0 3.6 V 3.4 V 3.5 3.0 2.5 2.0 1 ...

Page 3

TYPICAL PERFORMANCE CURVES OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER (460 MHz 3 150 mA Dset f = 460 MHz P out ...

Page 4

TYPICAL PERFORMANCE CURVES OUTPUT POWER, DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 3 out f = 915 MHz dBm 0.0 1.0 2.0 3.0 ...

Page 5

... TYPICAL SCATTERING PARAMETERS Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 j25 j10 100 -j10 -j25 -j50 NE5520379A 300 FREQUENCY S 11 GHz MAG ANG 0.10 0.91 -166.00 0.15 0.91 -171.34 0.20 0.91 -174.19 0.25 0.91 -176 ...

Page 6

... TYPICAL SCATTERING PARAMETERS Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 j25 j10 100 -j10 -j25 -j50 NE5520379A 600 FREQUENCY S 11 GHz MAG ANG 0.10 0.93 -166.51 0.15 0.93 -171.79 0.20 0.93 -174.68 0.25 0.93 -176 ...

Page 7

... APPLICATION CIRCUIT (900 MHz C11 P1 GND C12 C13 C14 U1 100637 NE55XXX79A-EV SOURCE DRAIN GATE + 4.7uF 0.1uF 1000pF 10pF RF Input NE5520379A PARTS LIST 1 TF-100637 4 2 MA101J C2 MCR03J512 R1 2 MCH185A180JK C4 MCH185A4R7CK C14 2 MCH185A100DK C1 MCH185A8R2DK C6 2 TAJB475K010R C12, C13 2 GRM40X7R104K025BL C10, C11 2 GRM40C0G102J050BD C8 NE5520379A U1 1 703401 ...

Page 8

RECOMMENDED SOLDERING CONDITIONS This prod those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum ...

Page 9

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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