MRF1517T1 Freescale Semiconductor, MRF1517T1 Datasheet - Page 4

• Manufacturer Part Number: MRF1517T1
• Manufacturer: Freescale Semiconductor

Specifications of MRF1517T1

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 4A
• Drain Source Voltage (max): 25V
• Output Power (max): 8W
• Power Gain (typ)@vds: 11dB
• Frequency (max): 520MHz
• Package Type: PLD-1.5
• Pin Count: 4
• Forward Transconductance (typ): 0.9(Min)S
• Input Capacitance (typ)@vds: 66@7.5VpF
• Output Capacitance (typ)@vds: 38@7.5VpF
• Reverse Capacitance (typ): 6@7.5VpF
• Operating Temp Range: -65C to 150C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 62500mW
• Vswr (max): 20
• Screening Level: Military
• Lead Free Status / Rohs Status: Not Compliant

MRF1517T1
4
18
10
16
14
12
12
10
12
10
8
6
4
2
0
8
6
4
2
0
8
6
0
1
5
Figure 8. Output Power versus Supply Voltage
Figure 6. Output Power versus Biasing Current
500 MHz
520 MHz
2
500 MHz
Figure 4. Gain versus Output Power
200
3
6
480 MHz
V
500 MHz
DD
P
I
out
DQ
4
, SUPPLY VOLTAGE (VOLTS)
, OUTPUT POWER (WATTS)
, BIASING CURRENT (mA)
480 MHz
520 MHz
400
5
7
520 MHz
480 MHz
6
600
8
TYPICAL CHARACTERISTICS, 480 - 520 MHz
7
V
DD
P
V
P
I
8
DQ
= 7.5 Vdc
DD
in
in
= 150 mA
= 27 dBm
= 27 dBm
= 7.5 Vdc
800
9
9
10
1000
10
80
70
60
50
40
30
20
10
80
70
60
50
40
30
80
70
60
50
40
30
1
Figure 5. Drain Efficiency versus Output Power
0
5
Figure 9. Drain Efficiency versus Supply Voltage
Figure 7. Drain Efficiency versus Biasing Current
480 MHz
2
500 MHz
200
6
3
480 MHz
520 MHz
520 MHz
V
P
I
DD
out
DQ
4
, SUPPLY VOLTAGE (VOLTS)
, OUTPUT POWER (WATTS)
, BIASING CURRENT (mA)
520 MHz
400
7
5
500 MHz
6
600
8
7
Freescale Semiconductor
500 MHz
480 MHz
P
V
8
P
I
DD
in
DQ
in
V
= 27 dBm
= 7.5 Vdc
= 150 mA
DD
= 27 dBm
800
RF Device Data
9
9
= 7.5 Vdc
10
1000
10
11