MRF18030ALSR Freescale Semiconductor, MRF18030ALSR Datasheet

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MRF18030ALSR

Manufacturer Part Number
MRF18030ALSR
Description
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF18030ALSR

Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Power Gain (typ)@vds
14dB
Frequency (min)
1.8GHz
Frequency (max)
2GHz
Package Type
NI-400S
Pin Count
3
Forward Transconductance (typ)
2S
Reverse Capacitance (typ)
1.3@26VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
50%
Mounting
Surface Mount
Mode Of Operation
GSM
Number Of Elements
1
Power Dissipation (max)
83300mW
Vswr (max)
5
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier
amplifier applications. Specified for GSM 1805 - 1880 MHz.
• Typical GSM Performance:
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 Watts CW Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for GSM and EDGE base station applications with frequencies
Derate above 25°C
Power Gain - 14 dB (Typ) @ 30 Watts
Efficiency - 50% (Typ) @ 30 Watts
C
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
CASE 465E - 04, STYLE 1
Document Number: MRF18030A
MRF18030ALSR3
MRF18030ALR3 MRF18030ALSR3
MRF18030ALR3
1800- 1880 MHz, 30 W, 26 V
MRF18030ALR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 400
GSM/GSM EDGE
M3 (Minimum)
2 (Minimum)
- 65 to +150
- 0.5, +65
- 0.5, +15
Value
Value
Class
CASE 465F - 04, STYLE 1
83.3
0.48
150
200
2.1
MRF18030ALSR3
NI - 400S
Rev. 8, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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MRF18030ALSR Summary of contents

Page 1

... RF POWER MOSFETs CASE 465E - 04, STYLE 400 MRF18030ALR3 CASE 465F - 04, STYLE 400S MRF18030ALSR3 Symbol Value Unit V - 0.5, +65 Vdc DSS V - 0.5, +15 Vdc 0.48 W/° +150 °C stg T 150 ° 200 °C J Symbol Value Unit R 2.1 °C/W θJC Class 2 (Minimum) M3 (Minimum) MRF18030ALR3 MRF18030ALSR3 1 ...

Page 2

... Vdc 250 mA 1805 - 1880 MHz Input Return Loss @ Vdc 250 mA 1805 - 1880 MHz Part internally matched both on input and output. 2. Device specifications obtained on a Production Test Fixture. MRF18030ALR3 MRF18030ALSR3 2 = 25°C, 50 ohm system unless otherwise noted) C Symbol V (BR)DSS I DSS I GSS V ...

Page 3

... Microstrip 0.189″ x 0.394″ Microstrip 0.335″ x 0.394″ Microstrip 0.484″ x 0.087″ Microstrip 0.877″ x 0.087″ Microstrip 0.366″ x 0.087″ Microstrip ≈0.600″ x 0.087″ Microstrip V SUPPLY C10 C6 C3 MRF18030A Ground (supply) MRF18030ALR3 MRF18030ALSR3 3 ...

Page 4

... P , OUTPUT POWER (WATTS) out Figure 5. Power Gain versus Output Power 250 1840 MHz T = 25_C 9 0 OUTPUT POWER (WATTS) out Figure 7. Power Gain versus Output Power MRF18030ALR3 MRF18030ALSR3 4 TYPICAL CHARACTERISTICS −5 30 −10 25 − −20 IRL @ −25 5 −30 0 1900 1950 1780 1800 Figure 4. Output Power versus Frequency ...

Page 5

... Test circuit impedance as measured from source gate to ground. = Test circuit impedance as measured load from drain to ground. Device Input Under Test Matching Network Z Z source load Ω o Output Matching Network MRF18030ALR3 MRF18030ALSR3 5 ...

Page 6

... MRF18030ALR3 MRF18030ALSR3 6 NOTES RF Device Data Freescale Semiconductor ...

Page 7

... REF 0.127 REF bbb .010 REF 0.254 REF A B ccc .015 REF 0.38 REF M M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF18030ALR3 MRF18030ALSR3 MAX 20.44 9.9 4.14 7.24 1.14 0.15 15.24 BSC 1.7 3.1 10 10.3 10 10.3 3 ...

Page 8

... P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF18030ALR3 MRF18030ALSR3 Document Number: MRF18030A Rev. 8, 5/2006 8 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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