AGR09130EFDB LSI, AGR09130EFDB Datasheet

AGR09130EFDB

Manufacturer Part Number

AGR09130EFDB

Description

Manufacturer

LSI

Datasheet

1.AGR09130EFDB.pdf (10 pages)

Specifications of AGR09130EFDB

Channel Type

Channel Mode

Enhancement

Continuous Drain Current

15A

Drain Source Voltage (max)

30V

Output Power (max)

150W(Typ)

Power Gain (typ)@vds

18@26VdB

Frequency (min)

921MHz

Frequency (max)

960MHz

Pin Count

Output Capacitance (typ)@vds

72@28VpF

Reverse Capacitance (typ)

3@28VpF

Operating Temp Range

-65C to 200C

Drain Efficiency (typ)

55%

Mounting

Screw

Mode Of Operation

EDGE

Number Of Elements

Power Dissipation (max)

350mW

Vswr (max)

2(Typ)

Screening Level

Military

Lead Free Status / Rohs Status

Not Compliant

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AGR09130E

130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET

Introduction

The

metal oxide semiconductor (LDMOS) RF power tran-

sistor suitable for cellular band, code division multiple

access (CDMA), global system for mobile communi-

cation (GSM), enhanced data for global evolution

(EDGE), and time division multiple access (TDMA)

single and multicarrier class AB wireless base station

amplifier applications. This device is manufactured

on an advanced LDMOS technology offering state-

of-the-art performance, and reliability. Packaged in

an industry-standard package incorporating internal

matching and capable of delivering a minimum out-

put power of 130 W, it is ideally suited for today's RF

power amplifier applications.

Features

AGR09130EU (unflanged)

Typical performance ratings are for the EDGE

format: 3GPP GSM 05.05:

— Output power (P

— Power gain: 17.8 dB.

— Modulation spectrum:

— Error vector magnitude (EVM) = 1.8%.

— Return loss: –10 dB.

High-reliability, gold-metalization process.

Internally matched.

High gain, efficiency, and linearity.

Integrated ESD protection.

Si LDMOS.

Industry-standard packages.

P1dB of 130 W minimum output power.

AGR09130E

@ ±400 kHz = –60 dBc.

@ ±600 kHz = –72 dBc.

Figure 1. Available Packages

is a high-voltage, laterally diffused

OUT

): 50 W.

AGR09130EF (flanged)

Table 1. Thermal Characteristics

Table 2. Absolute Maximum Ratings*

* Stresses in excess of the absolute maximum ratings can cause

Table 3. ESD Rating*

* Although electrostatic discharge (ESD) protection circuitry has

Caution: MOS devices are susceptible to damage from elec-

Drain-source Voltage

Gate-source Voltage

Drain Current—Continuous

Total Dissipation at T

Operating Junction Tempera-

Storage Temperature Range

Thermal Resistance,

been designed into this device, proper precautions must be

taken to avoid exposure to ESD and electrical overstress (EOS)

during all handling, assembly, and test operations. Agere

employs a human-body model (HBM), a machine model (MM),

and a charged-device model (CDM) qualification requirement in

order to determine ESD-susceptibility limits and protection

design evaluation. ESD voltage thresholds are dependent on the

circuit parameters used in each of the models, as defined by

JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and

JESD22-C101A (CDM) standards.

permanent damage to the device. These are absolute stress rat-

ings only. Functional operation of the device is not implied at

these or any other conditions in excess of those given in the

operational sections of the data sheet. Exposure to absolute

maximum ratings for extended periods can adversely affect

device reliability.

Derate Above 25 C:

ture

Junction to Case:

AGR09130E

AGR09130EU

AGR09130EF

AGR09130EU

AGR09130EF

AGR09130EU

AGR09130EF

HBM

CDM

Parameter

trostatic charge. Reasonable precautions in han-

dling and packaging MOS devices should be

observed.

Parameter

Minimum (V)

= 25 °C:

Preliminary Data Sheet

1500

500

Sym

DSS

STG

Value

0.5

–65, 150

–0.5, 15 Vdc

April 2004

Value

350

200

2.0

Class

°C/W

Unit

W/°C

Unit

Vdc

Adc

°C

Related parts for AGR09130EFDB

AGR09130EFDB Summary of contents

Page 1

AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction AGR09130E The is a high-voltage, laterally diffused metal oxide semiconductor (LDMOS) RF power tran- sistor suitable for cellular band, code division multiple access (CDMA), global system for mobile communi- ...

Page 2

W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Electrical Characteristics Recommended operating conditions apply unless otherwise specified: T Table 4. dc Characteristics Parameter Drain-source Breakdown Voltage (V Gate-source Leakage Current (V Zero Gate Voltage Drain Leakage Current (V Forward ...

Page 3

Preliminary Data Sheet April 2004 Test Circuit Illustrations for AGR09130E FB2 FB1 C24 C23 C29 C25 INPUT C2 C3 Parts List: Microstrip line: Z1 0.834 in. x 0.066 in.; ...

Page 4

W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics MHz (f) Complex Source Impedance 920 (f1) 940 960 (f3) INPUT MATCH Figure 3. Series Equivalent Input and Output Impedances ...

Page 5

Preliminary Data Sheet April 2004 Typical Performance Characteristics 200 180 160 140 120 100 0.00 0.50 TEST CONDITIONS 1 °C, FORMAT = CW ...

Page 6

W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics 960 MHz TEST CONDITIONS 1 °C, FORMAT ...

Page 7

Preliminary Data Sheet April 2004 Typical Performance Characteristics 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 35 TEST CONDITIONS 1 °C, FREQUENCY = 940 MHz, EDGE FORMAT = ...

Page 8

W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics 0.00 -10.00 -20.00 -30.00 -40.00 -50.00 -60.00 -70.00 0.00 TEST CONDITIONS 1 ° 940.0 MHz, F2 ...

Page 9

Preliminary Data Sheet April 2004 Package Dimensions All dimensions are in inches. Tolerances are ±0.005 in. unless specified. AGR09130EU 1 AGERE AGERE M-AGR21125U AGR09130XU YYWWLL XXXXX YYWWUR ZZZZZZZ ZZZZZZZ 2 AGR09130EF AGERE AGERE M-AGR21125F AGR09130XF YYWWLL XXXXX YYWWUR ZZZZZZZ ZZZZZZZ ...

Page 10

W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET RF Power Product Information For product and application information, please visit our website: http://www.agere.com/rfpower. Johanson and Giga-Trim are registered trademarks of Johanson Manufacturing Corporation. ATC is a registered trademark of American ...

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