SST25VF040B-50-4C-QAF Microchip Technology, SST25VF040B-50-4C-QAF Datasheet - Page 2

• Manufacturer Part Number: SST25VF040B-50-4C-QAF
• Description: Flash 512K X 8 14 us
• Manufacturer: Microchip Technology

Specifications of SST25VF040B-50-4C-QAF

• Memory Type: NAND
• Memory Size: 4 Mbit
• Architecture: Sectored
• Interface Type: SPI
• Access Time: 50 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 15 mA
• Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Package / Case: WSON-8
• Organization: 32 KB
• Lead Free Status / Rohs Status: Details

A Microchip Technology Company
©2011 Silicon Storage Technology, Inc.
Product Description
The 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low
pin-count package which occupies less board space and ultimately lowers total system costs. The
SST25VF040B devices are enhanced with improved operating frequency and even lower power con-
sumption. SST25VF040B SPI serial flash memories are manufactured with SST proprietary, high-per-
formance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared with alternate approaches.
The SST25VF040B devices significantly improve performance and reliability, while lowering power
consumption. The devices write (Program or Erase) with a single power supply of 2.7-3.6V for
SST25VF040B. The total energy consumed is a function of the applied voltage, current, and time of
application. Since for any given voltage range, the SuperFlash technology uses less current to pro-
gram and has a shorter erase time, the total energy consumed during any Erase or Program operation
is less than alternative flash memory technologies.
The SST25VF040B device is offered in an 8-lead SOIC (200 mils), 8-lead SOIC (150 mils), and 8-con-
tact WSON (6mm x 5mm) packages. See Figure 2 for pin assignments.
2
4 Mbit SPI Serial Flash
SST25VF040B
S71295-06-000
Data Sheet
02/11