SI4927DY Vishay, SI4927DY Datasheet
SI4927DY
Specifications of SI4927DY
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SI4927DY Summary of contents
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... Document Number: 70808 S-59519—Rev. B, 04-Sep-98 I (A) D 7.4 5 P-Channel MOSFET Symbol stg Symbol sec R R thJA thJA Steady State Si4927DY Vishay Siliconix P-Channel MOSFET Limit Unit – 7.4 5 –2.1 2 1.6 –55 to 150 C Typical Maximum Unit 50 C/W C/W 75 www.vishay.com FaxBack 408-970-5600 2-1 ...
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... Si4927DY Vishay Siliconix Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...
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... Total Gate Charge (nC) g Document Number: 70808 S-59519—Rev. B, 04-Sep- 4000 3200 2400 1600 800 On-Resistance vs. Junction Temperature 1 1.4 1.2 1.0 0.8 0 –50 –25 Si4927DY Vishay Siliconix Transfer Characteristics T = 125 – – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage ( 7 ...
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... Si4927DY Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0 250 A D 0.6 0.4 0.2 0.0 –0.2 –0.4 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...