MC74HC595AD ON Semiconductor, MC74HC595AD Datasheet - Page 3

• Manufacturer Part Number: MC74HC595AD
• Description: Counter Shift Registers 8-Bit 3 State Shift
• Manufacturer: ON Semiconductor

Specifications of MC74HC595AD

• Counting Sequence: Serial to Serial/Parallel
• Number Of Circuits: 2
• Package / Case: SOIC-16
• Logic Family: 74HC
• Logic Type: CMOS
• Output Type: 3-State
• Propagation Delay Time: 140 ns, 100 ns, 28 ns, 24 ns
• Supply Voltage (max): 6 V
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 55 C
• Function: Shift Register
• Mounting Style: SMD/SMT
• Operating Supply Voltage: 2 V to 6 V
• Dc: N/A
• Lead Free Status / Rohs Status: No RoHS Version Available

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
1. Tested to EIA/JESD22−A114−A.
2. Tested to EIA/JESD22−A115−A.
3. Tested to JESD22−C101−A.
MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
DC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
V
Symbol
V
in
V
V
V
V
T
t
I
I
V
V
P
V
T
ESD
, V
T
r
I
out
CC
CC
out
stg
CC
, t
OH
in
IH
in
D
A
IL
L
f
out
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
DC Output Current, per Pin
DC Supply Current, V
Power Dissipation in Still Air,
Storage Temperature
Lead Temperature, 1 mm from Case for 10 Seconds
ESD Withstand Voltage Human Body Model (Note 1)
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage
(Referenced to GND)
Operating Temperature, All Package Types
Input Rise and Fall Time
Minimum High−Level Input
Voltage
Maximum Low−Level Input
Voltage
Minimum High−Level Output
Voltage, Q
(Figure 1)
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
Parameter
A
− Q
(Plastic DIP, SOIC or TSSOP Package)
H
Parameter
Parameter
Charged Device Model (Note 3)
CC
and GND Pins
Machine Model (Note 2)
V
|I
V
|I
V
|I
V
out
out
out
TSSOP Package†
(Voltages Referenced to GND)
out
out
in
in
SOIC Package†
= V
= V
| v 20 mA
| v 20 mA
| v 20 mA
= 0.1 V or V
= 0.1 V or V
IH
IH
Plastic DIP†
V
V
V
Test Conditions
CC
CC
CC
or V
or V
= 2.0 V
= 4.5 V
= 6.0 V
IL
IL
http://onsemi.com
CC
CC
|I
|I
|I
– 0.1 V
– 0.1 V
out
out
out
–0.5 to V
–0.5 to V
| v 2.4 mA
| v 6.0 mA
| v 7.8 mA
3
– 55
Min
–0.5 to +7.0
–65 to +150
2.0
0
0
0
0
>3000
Value
>400
±20
±35
±75
750
500
450
260
N/A
CC
CC
+0.5
+0.5
+ 125
1000
Max
V
500
400
6.0
CC
V
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
2.0
4.5
6.0
3.0
4.5
6.0
V
CC
Unit
mW
mA
mA
mA
_C
_C
V
V
V
V
Unit
_C
ns
V
V
– 55 to 25_C
3.15
1.35
2.48
3.98
5.48
1.5
2.1
4.2
0.5
0.9
1.8
1.9
4.4
5.9
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V
V
range GND v (V
tied to an appropriate logic voltage
level (e.g., either GND or V
Unused outputs must be left open.
Guaranteed Limit
out
This device contains protection
Unused inputs must always be
should be constrained to the
v 85_C
3.15
1.35
2.34
3.84
5.34
1.5
2.1
4.2
0.5
0.9
1.8
1.9
4.4
5.9
in
v 125_C
or V
3.15
1.35
1.5
2.1
4.2
0.5
0.9
1.8
1.9
4.4
5.9
2.2
3.7
5.2
out
) v V
in
CC
CC
and
Unit
V
V
V
.
).