GT28F160C3TA90 Intel, GT28F160C3TA90 Datasheet - Page 39

• Manufacturer Part Number: GT28F160C3TA90
• Description: Flash Mem Parallel 3V/3.3V 16M-Bit 1M x 16 90ns 48-Pin UBGA
• Manufacturer: Intel

Specifications of GT28F160C3TA90

• Package: 48UBGA
• Density: 16 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 31
• Support Of Common Flash Interface: Yes
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

8.0
8.1
Datasheet
R1
R2
R3
R4
R5
R6
R7
R8
R9
R10
NOTES:
1. OE# may be delayed up to t
2. Sampled, but not 100% tested.
3. See
4. See
#
slew rate.
Table 13. Read Operations—8 Mbit Density
Figure 8, “Read Operation Waveform” on page
Figure 11, “AC Input/Output Reference Waveform” on page 49
t
t
t
t
t
t
t
t
t
t
Sym
AVAV
AVQV
ELQV
GLQV
PHQV
ELQX
GLQX
EHQZ
GHQZ
OH
Read Cycle Time
Address to Output Delay
CE# to Output Delay
OE# to Output Delay
RP# to Output Delay
CE# to Output in Low Z
OE# to Output in Low Z
CE# to Output in High Z
OE# to Output in High Z
Output Hold from
Address, CE#, or OE#
Change, Whichever
Occurs First
AC Characteristics
AC Read Characteristics
Parameter
ELQV–
t
GLQV
Product
Density
V
CC
after the falling edge of CE# without impact on t
Note
1,3,4
1,3,4
2,3,4
2,3,4
2,3,4
2,3,4
2,3,4
3,4
3,4
3,4
3.0 V – 3.6 V
Min
80
42.
0
0
0
Max
150
Intel
80
80
30
20
20
90 ns
£
for timing measurements and maximum allowable input
2.7 V – 3.6 V
Min
Advanced+ Boot Block Flash Memory (C3)
90
0
0
0
Max
150
90
90
30
20
20
8 Mbit
3.0 V – 3.6 V
Min
100
0
0
0
ELQV
.
Max
100
100
150
30
20
20
110 ns
2.7 V – 3.6 V
Min
110
0
0
0
Max
110
110
150
30
20
20
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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