1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
RF Power MOSFET Transistor
200W, 2-175MHz, 28V
Features
•
•
•
•
•
DU28200M
ABSOLUTE MAXIMUM RATINGS AT 25° C
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
TYPICAL DEVICE IMPEDANCE
Z
from gate to source.
Z
measured from drain to ground.
ELECTRICAL CHARACTERISTICS AT 25°C
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
IN
LOAD
N-Channel enhancement mode device
DMOS structure
Lower capacitances for broadband operation
High saturated output power
Lower noise figure than bipolar devices
is the series equivalent input impedance of the device
F (MHz)
Parameter
is the optimum series equivalent load impedance as
100
150
175
200
30
V
DD
Parameter
= 28V, I
DQ
= 1000mA, P
2.7 - j4.8
1.6 - j3.0
1.5 - j2.0
1.6 - j1.0
1.8 - j0.5
Z
Symbol
IN
T
V
V
θ
I
P
(Ω)
T
STG
DS
DS
GS
JC
D
J
OUT
-65 to +150
VSWR-T
= 200 W
Symbol
V
BV
Rating
C
C
C
I
I
GS(TH)
G
0.45
G
DSS
GSS
ŋ
389
200
OSS
RSS
65
20
20
ISS
DSS
D
5.25 - j1.4
M
Z
5.0 - j0.7
P
7.2 - j1.9
5.2 - j0.6
5.5 - j0.5
LOAD
(Ω)
Min
2.0
2.5
65
13
55
-
-
-
-
-
-
Units
°C/W
°C
°C
W
V
V
A
Max
10:1
225
200
5.0
5.0
6.0
40
-
-
-
-
Package Outline
Units
mA
µA
pF
pF
pF
dB
%
V
V
S
-
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
V
V
V
V
V
V
V
V
V
V
V
GS
GS
GS
DS
DS
DS
DS
DS
DD
DD
DD
= 0.0 V , I
= 28.0 V , V
= 20.0 V , V
= 10.0 V , I
= 10.0 V , I
= 28.0 V , F = 1.0 MHz
= 28.0 V , F = 1.0 MHz
= 28.0 V , F = 1.0 MHz
= 28.0 V, I
= 28.0 V, I
= 28.0 V, I
DS
LETTER
DS
DS
DQ
DQ
DQ
DIM
GS
DS
G
M
= 25.0 mA
A
B
C
D
E
F
H
K
L
N
P
J
= 500.0 mA
= 5.0A , Δ V
= 1000 mA, P
= 1000 mA, P
= 1000 mA, P
= 0.0 V
= 0.0 V
Test Conditions
30.35
23.65
13.72
18.80
MIN
9.63
9.40
9.40
5.59
9.40
3.12
1.47
2.39
5.03
.05
MILLIMETERS
Released;
GS
OUT
OUT
OUT
= 1.0V, 80 μs Pulse
M/A-COM Products
30.61
23.90
14.22
19.30
MAX
9.88
9.65
9.65
5.84
9.65
3.38
1.57
2.74
5.69
.13
= 200.0 W F =175 MHz
= 200.0 W F =175 MHz
= 200.0 W F =175 MHz
RoHS Compliant
1.195
.931
.540
.379
.370
.370
.220
.740
.370
.123
.058
.094
.198
.002
MIN
INCHES
1.205
MAX
.941
.560
3.89
.389
.389
.230
.760
.380
.133
.062
.108
.224
.005
