CY7C1302CV25-167BZC Cypress Semiconductor Corp, CY7C1302CV25-167BZC Datasheet

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CY7C1302CV25-167BZC

Manufacturer Part Number
CY7C1302CV25-167BZC
Description
SRAM Chip Sync Dual 2.5V 9M-Bit 512K x 18 2.5ns 165-Pin FBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1302CV25-167BZC

Package
165FBGA
Timing Type
Synchronous
Density
9 Mb
Data Rate Architecture
QDR
Typical Operating Supply Voltage
2.5 V
Address Bus Width
19 Bit
Number Of I/o Lines
18 Bit
Number Of Ports
2
Number Of Words
512K

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Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1302CV25-167BZC
Manufacturer:
CYPRESS
Quantity:
8 831
Cypress Semiconductor Corporation
Document #: 38-05491 Rev. *A
Features
Configurations
CY7C1302CV25 – 512K x 18
• Separate independent Read and Write data ports
• 167-MHz clock for high bandwidth
• 2-word burst on all accesses
• Double Data Rate (DDR) interfaces on both Read and
• Two input clocks (K and K) for precise DDR timing
• Two output clocks (C and C) account for clock skew
• Single multiplexed address input bus latches address
• Separate Port Selects for depth expansion
• Synchronous internally self-timed writes
• 2.5V core power supply with HSTL Inputs and Outputs
• 13 x 15 x 1.4 mm 1.0-mm pitch fBGA package, 165 ball
• Variable drive HSTL output buffers
• Expanded HSTL output voltage (1.4V–1.9V)
• JTAG Interface
— Supports concurrent transactions
— 2.5 ns clock-to-Valid access time
Write ports (data transferred at 333 MHz) @ 167 MHz
— SRAM uses rising edges only
and flight time mismatching
inputs for both Read and Write ports
(11 x 15 matrix)
Logic Block Diagram (
A
(17:0)
BWS
WPS
BWS
Vref
D
K
K
[17:0]
18
0
1
Register
Address
Control
Logic
CY7C1302CV25
18
CLK
Gen.
3901 North First Street
)
PREMILINARY
9-Mbit Burst of Two Pipelined SRAMs
Write
Data Reg
256Kx18
Memory
Array
Read Data Reg.
Functional Description
The CY7C1302CV25 is a 2.5V Synchronous Pipelined SRAM
equipped with QDR™ architecture. QDR architecture consists
of two separate ports to access the memory array. The Read
port has dedicated data outputs to support Read operations
and the Write Port has dedicated data inputs to support Write
operations. Access to each port is accomplished through a
common address bus. The Read address is latched on the
rising edge of the K clock and the Write address is latched on
the rising edge of K clock. QDR has separate data inputs and
data outputs to completely eliminate the need to “turn-around”
the data bus required with common I/O devices. Accesses to
the CY7C1302CV25 Read and Write ports are completely
independent of one another. All accesses are initiated
synchronously on the rising edge of the positive input clock
(K). In order to maximize data throughput, both Read and
Write ports are equipped with DDR interfaces. Therefore, data
can be transferred into the device on every rising edge of both
input clocks (K and K) and out of the device on every rising
edge of the output clock (C and C, or K and K in a single clock
domain) thereby maximizing performance while simplifying
system design. Each address location is associated with two
18-bit words that burst sequentially into or out of the device.
Depth expansion is accomplished with a Port Select input for
each port. Each Port Select allows each port to operate
independently.
All synchronous inputs pass through input registers controlled
by the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
256Kx18
Memory
Array
36
Write
Data Reg
18
18
with QDR™ Architecture
Reg.
Reg.
San Jose
Register
Address
Control
Logic
Reg.
,
18
CA 95134
18
18
RPS
CY7C1302CV25
C
C
18
Revised June 1, 2004
A
(17:0)
Q
[17:0]
408-943-2600

Related parts for CY7C1302CV25-167BZC

CY7C1302CV25-167BZC Summary of contents

Page 1

... K clock. QDR has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus required with common I/O devices. Accesses to the CY7C1302CV25 Read and Write ports are completely independent of one another. All accesses are initiated synchronously on the rising edge of the positive input clock (K) ...

Page 2

... Selection Guide Maximum Operating Frequency Maximum Operating Current Pin Configuration–CY7C1302CV25 (Top View Gnd/144M NC/36M D10 D NC D11 Q10 Q11 F NC Q12 D12 G NC D13 Q13 H NC VREF VDDQ D14 Q14 L NC Q15 D15 D16 N NC D17 Q16 Q17 R TDO TCK ...

Page 3

... K). Read Operations The CY7C1302CV25 is organized internally as 2 arrays of 256K x 18. Accesses are completed in a burst of two sequential 18-bit data words. Read operations are initiated by asserting RPS active at the rising edge of the positive input clock (K) ...

Page 4

... This feature can be used to simplify Read/Modify/Write operations to a Byte Write operation. Single Clock Mode The CY7C1302CV25 can be used with a single clock mode. In this mode the device will recognize only the pair of input clocks (K and K) that control both the input and output registers ...

Page 5

... During the Data portion of a Write sequence, only the byte (D D remains unaltered. [8:0] No data is written into the device during this portion of a Write operation. No data is written into the device during this portion of a Write operation. ↑ represents rising edge. , BWS 0 CY7C1302CV25 RPS WPS D(A+0)at K(t) ↑ Q(A+0) at C(t+1)↑ ...

Page 6

... RQ <= 350Ω. DDQ /2)/(RQ/5) for values of 175Ω <= RQ <= 350Ω. DDQ (Max – 0.2V. IL REF (Max.) = 0.95V or 0.54V , whichever is smaller. REF DDQ CY7C1302CV25 Ambient [10] Temperature ( 0°C to +70°C 2.5 ± 0.1V Min. Typ. Max. ...

Page 7

... JIG AND SCOPE [17] Description , BWS ) 0 1 Set-up to Clock (K and K) Rise /I and load capacitance shown in ( test loads the time power needs to be supplied above V Power CY7C1302CV25 165 FBGA Package Unit 16.7 2.5 Test Conditions T = 25° MHz 2.5V 1.5V DDQ ALL INPUT PULSES 1 ...

Page 8

... PREMILINARY [17] Description , BWS ) 0 1 Hold after Clock (K and K) Rise [19, 20] [19, 20] is less than t and, t less than t . CLZ CHZ CO CY7C1302CV25 -167 -133 -100 Min. Max. Min. Max. Min. Max. 0.7 0.8 1.0 0.7 0.8 1.0 0.7 0.8 1.0 2.5 3.0 3.0 1.2 1 ...

Page 9

... In this example, if address A2=A1 then data Q20=D10 and Q21=D11. Write data is forwarded immediately as read results.This note applies to the whole diagram. Document #: 38-05491 Rev. *A PREMILINARY WRITE READ WRITE CYC t KHKH tHC D31 D50 D51 Q00 Q01 t DOH t CLZ KHKH tCYC CY7C1302CV25 NOP WRITE D60 D61 Q20 Q21 Q40 t DOH DON’T CARE NOP 9 10 Q41 t CHZ UNDEFINED Page ...

Page 10

... The IDCODE instruction causes a vendor-specific, 32-bit code to be loaded into the instruction register. It also places the instruction register between the TDI and TDO pins and allows the IDCODE to be shifted out of the device when the TAP controller enters the Shift-DR state. The IDCODE instruction CY7C1302CV25 Page ...

Page 11

... Q-bus pins. Note that this bit is pre-set HIGH to enable the output when the device is powered-up, and also when the TAP controller is in the “Test-Logic-Reset” state. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions. CY7C1302CV25 Page ...

Page 12

... TEST-LOGIC/ 0 IDLE Note: 24. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document #: 38-05491 Rev. *A PREMILINARY [24] SELECT DR-SCAN 0 1 CAPTURE-DR 0 SHIFT-DR 1 EXIT1-DR 0 PAUSE- EXIT2-DR 1 UPDATE- CY7C1302CV25 1 SELECT IR-SCAN 0 1 CAPTURE- SHIFT- EXIT1- PAUSE- EXIT2-IR 1 UPDATE- Page ...

Page 13

... TAP Controller [11, 9, 25] Over the Operating Range Test Conditions = −2 −100 µ 2 100 µ GND ≤ V ≤ DDQ [26, 27] Over the Operating Range Description CY7C1302CV25 0 Selection 0 Circuitry 0 0 Min. Max. 1.7 2.1 0.7 0.2 1 0.3 DD –0.3 0.7 –5 5 Min. Max. 100 ...

Page 14

... TH t TMSS t TMSH t TDIS t TDIH t TDOX Value CY7C1302CV25 001 Version number. 01011010010010110 Defines the type of SRAM. 00000110100 Allows unique identification of SRAM vendor. 1 Indicate the presence register. CY7C1302CV25 [26, 27] Min. Max ALL INPUT PULSES 2.5V 1.25V t TCYC t TDOV Description Page Unit ns ns ...

Page 15

... Places the bypass register between TDI and TDO. This operation does not affect SRAM operation. Boundary Scan Order Bump 11P 10P 10N 9P 10M 11N 9M 9N 11L 11M 9L 10L 11K 10K CY7C1302CV25 Description (continued) Bit # Bump 10J 26 11J 27 11H 28 10G 11F 31 11G 10F ...

Page 16

... Boundary Scan Order (continued) Bit # Document #: 38-05491 Rev. *A PREMILINARY Boundary Scan Order Bump ID Internal CY7C1302CV25 (continued) Bit # Bump 100 1P 101 3R 102 4R 103 4P 104 5P 105 5N 106 5R Page ...

Page 17

... Ordering Information Speed (MHz) Ordering Code 167 CY7C1302CV25-167BZC 133 CY7C1302CV25-133BZC 100 CY7C1302CV25-100BZC Package Diagram Quad Data Rate SRAM and QDR SRAM comprise a new family of products developed by Cypress, IDT, NEC and Samsung. All product and company names mentioned in this document are trademarks of their respective holders. ...

Page 18

... Document History Page Document Title:CY7C1302CV25 9-Mb Burst of 2 Pipelined SRAM with QDR™ Architecture Document Number: 38-05491 REV. ECN NO. Issue Date ** 208401 see ECN *A 230396 see ECN Document #: 38-05491 Rev. *A PREMILINARY Orig. of Change DIM New Data Sheet VBL Upload datasheet to the internet ...

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