MRF166W Freescale Semiconductor, MRF166W Datasheet
MRF166W
Specifications of MRF166W
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MRF166W Summary of contents
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... Thermal Resistance — Junction to Case NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 1 Order this document by MRF166W/D MRF166W 40 W, 500 MHz TMOS BROADBAND RF POWER FET CASE 412–01, Style 1 ...
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ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic OFF CHARACTERISTICS (1) Drain–Source Breakdown Voltage ( Vdc 5.0 mA) Zero Gate Voltage Drain Current ( Vdc ...
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... C1, C2, C7 C9, C10, C11, C12 C13 C14 L1 R3, R4 Board Material – Teflon Fiberglass Dielectric Thickness = 0.30 , Figure 1. MRF166W 500 MHz Test Circuit Schematic REV 3 3 C12 D.U. Inputs Line 70 mils x 2460 mils C4 C3 490 mils 220 pF, 100 mil Chip Capacitor, ATC 0 – ...
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MHz 0 INPUT POWER (WATTS) Figure 2. Output Power versus Input Power, 28 Vdc ...
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Vdc 100 mA, P out = MHz Ohms 175 3.7 – j 22.4 400 3.6 – j 10.99 500 2.88 – j 7.96 Table 1. Input and ...
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... MRF166W–500MHZ NOTES inch Glass Teflon 32 Mil Board, Copper Both Sides NOTES: 2) Small Holes are 40 Mils ID and Plated Through NOTES: 3) Large Holes are 140 Mils ID and Plated Through Figure 8. MRF166W Circuit Board Photomaster REV 3 6 Figure 9. MRF166W Test Fixture (Scale 1:1) ...
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Table 1. Common Source S–Parameters ( 230 mA MHz | 0.554 –85 40 0.775 –113 50 0.758 –124 60 0.711 –132 70 0.751 –139 80 0.742 ...
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Table 1. Common Source S–Parameters ( 230 mA) (continued MHz MHz | 450 0.830 –171 460 0.831 –172 470 0.832 –172 480 0.835 –173 490 0.835 –173 ...
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Table 2. Common Source S–Parameters ( 250 mA) (continued MHz MHz | 310 0.792 –167 320 0.798 –167 330 0.801 –168 340 0.800 –168 350 0.803 –169 ...
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Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 ...