2SK2855(TE12L,F) Toshiba, 2SK2855(TE12L,F) Datasheet

no-image

2SK2855(TE12L,F)

Manufacturer Part Number
2SK2855(TE12L,F)
Description
Manufacturer
Toshiba
Datasheet

Specifications of 2SK2855(TE12L,F)

Application
UHF
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
1A
Drain Source Voltage (max)
10V
Package Type
PW-Mini
Pin Count
3 +Tab
Operating Temp Range
-55C to 150C
Drain Efficiency (typ)
55(Min)%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
500mW
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
UHF BAND AMPLIFIER APPLICATION
ABSOLUTE MAXIMUM RATINGS
MARKING
Caution: This device is sensitive to electrostatic discharge.
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment.These TOSHIBA
products are neither intended nor warranted for any other use.Do not use
these TOSHIBA products listed in this document except for high frequency
Power Amplifier of telecommunications equipment.
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
Note:
Note 1: Tc = 25°C When mounted on a 1.6mm glass epoxy PCB
Lot No.
Using continuously under heavy loads (e.g. the application of high
CHARACTERISTIC
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Please make enough tool and equipment earthed when you handle.
1. Gate
2. Source
3. Drain
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
1
U
2
T
3
Part No. (or abbreviation code)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
P
SYMBOL
D
V
V
(Note 1)
T
T
GSS
DSS
I
stg
D
ch
2SK2855
(Ta = 25°C)
−55~150
RATING
150
1.0
0.5
10
±6
1
UNIT
°C
°C
W
V
V
A
JEDEC
JEITA
TOSHIBA
2−5K1D
SC−62
2007-11-01
2SK2855
Unit in mm

Related parts for 2SK2855(TE12L,F)

2SK2855(TE12L,F) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

... ELECTRICAL CHARACTERISTICS CHARACTERISTIC Output Power Drain Efficiency Drain-Source Breakdown Voltage Drain Cut-off Current Threshold Voltage Gate-Source Leakage Current Note 2: These characteristic values are measured using measurement tools specified by Toshiba. RF OUTPUT POWER TEST FIXTURE (Ta = 25°C) SYMBOL TEST CONDITION 849MHz 23dBmW ...

Page 3

Note 3: These are only typical curves and devices are not necessarily guaranteed at these curves. 3 2SK2855 2007-11-01 ...

Page 4

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...

Related keywords