2SK2855(TE12L,F) Toshiba, 2SK2855(TE12L,F) Datasheet
2SK2855(TE12L,F)
Specifications of 2SK2855(TE12L,F)
Related parts for 2SK2855(TE12L,F)
2SK2855(TE12L,F) Summary of contents
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... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...
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... ELECTRICAL CHARACTERISTICS CHARACTERISTIC Output Power Drain Efficiency Drain-Source Breakdown Voltage Drain Cut-off Current Threshold Voltage Gate-Source Leakage Current Note 2: These characteristic values are measured using measurement tools specified by Toshiba. RF OUTPUT POWER TEST FIXTURE (Ta = 25°C) SYMBOL TEST CONDITION 849MHz 23dBmW ...
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Note 3: These are only typical curves and devices are not necessarily guaranteed at these curves. 3 2SK2855 2007-11-01 ...
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... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...