MCH6602-TL-E ON Semiconductor, MCH6602-TL-E Datasheet - Page 3

• Manufacturer Part Number: MCH6602-TL-E
• Description: MOSFET N-CH DUAL 30V 350MA MCPH6
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of MCH6602-TL-E

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 350mA
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 1.58nC @ 10V
• Input Capacitance (ciss) @ Vds: 7pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, No Lead
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
1.0
10
10
9
8
7
6
5
4
3
2
1
0
0.01
7
6
5
4
3
2
1
0
0
7
5
3
2
--60
0
0
I D =40mA
--40
0.1
1
4.0V
--20
2
0.2
Drain-to-Source Voltage, V DS -- V
3.5V
2
Gate-to-Source Voltage, V GS -- V
80mA
Ambient Temperature, Ta -- ° C
3
0
0.3
3
R DS (on) -- V GS
Drain Current, I D -- A
R DS (on) -- Ta
R DS (on) -- I D
20
I D -- V DS
0.4
4
5
Ta=75°C
--25°C
25°C
40
0.5
7
5
60
0.1
0.6
6
80
0.7
7
100
2
V GS =1.5V
0.8
8
120
V GS =2.5V
Ta=25°C
3
0.9
IT00029
IT00031
IT00033
140
IT00035
9
MCH6602
160
1.0
10
5
0.01
0.30
0.25
0.20
0.15
0.10
0.05
100
1.0
1.0
1.0
0.1
10
10
0.001
0.01
0
7
5
3
2
7
5
3
2
7
5
3
2
0.01
7
5
3
2
7
5
3
2
0
V DS =10V
0.5
2
2
2
Gate-to-Source Voltage, V GS -- V
3
3
3
Drain Current, I D -- A
Drain Current, I D -- A
Drain Current, I D -- A
1.0
R DS (on) -- I D
R DS (on) -- I D
Ta=75°C

I D -- V GS
--25°C
y
5
5
5
fs -- I D
1.5
7
7
7
Ta=75°C
--25°C
25°C
0.01
0.1
0.1
25°C
25°C
2.0
2
2
2
No.6445-3/5
V GS =1.5V
V DS =10V
2.5
V GS =4V
3
3
3
IT00032
IT00034
IT00030
IT00036
3.0
5
5
5