MCH6601-TL-E ON Semiconductor, MCH6601-TL-E Datasheet - Page 3

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MCH6601-TL-E

Manufacturer Part Number
MCH6601-TL-E
Description
MOSFET P-CH DUAL 30V 200MA MCPH6
Manufacturer
ON Semiconductor
Series
-r
Datasheet

Specifications of MCH6601-TL-E

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10.4 Ohm @ 50mA, 4V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
200mA
Vgs(th) (max) @ Id
-
Gate Charge (qg) @ Vgs
1.43nC @ 10V
Input Capacitance (ciss) @ Vds
7.5pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-SMD, No Lead
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
--0.01
--0.1
100
1.0
10
18
16
14
12
10
30
25
20
15
10
--0.01
8
4
2
--0.5
5
0
7
5
3
2
7
5
3
2
6
5
3
2
7
5
3
2
--60
0
I D = --30mA
--40
--1
--0.6
--20
--2
Gate-to-Source Voltage, V GS -- V
2
Diode Forward Voltage, V SD -- V
Ambient Temperature, Ta -- C
--50mA
0
--3
R DS (on) -- V GS
Ta=75 C
Drain Current, I D -- A
--0.7
3
R DS (on) -- I D
R DS (on) -- Ta
20
--25 C
25 C
I S -- V SD
--4
40
5
--0.8
--5
60
7
--6
80
--0.9
--0.1
--7
100
V GS = --2.5V
--8
120
--1.0
V GS =0V
Ta=25 C
2
140
--9
IT00081
IT00083
IT00085
IT00079
MCH6601
--1.1
--10
160
3
1000
1000
0.01
100
100
100
1.0
--0.0001
1.0
0.1
10
10
10
--0.01
--0.01
--0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
2
2
2
Ta=75 C
--25 C
2
Drain Current, I D -- A
Drain Current, I D -- A
Drain Current, I D -- A
Drain Current, I D -- A
Ta=75 C
3
3
3
SW Time -- I D
R DS (on) -- I D
R DS (on) -- I D
--25 C
t f
y
fs
3
5
5
5
-- I D
t d (on)
25 C
7
7
7
t r
--0.001
--0.1
--0.1
25 C
5
V GS = --1.5V
V DD = --15V
V GS = --4V
25 C
V DS = --10V
V GS = --4V
No.6458-3/4
7
2
2
2
IT00082
IT00086
IT00080
IT00084
--0.1
3
3
3

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