NTMD5838NLR2G ON Semiconductor, NTMD5838NLR2G Datasheet - Page 3

• Manufacturer Part Number: NTMD5838NLR2G
• Description: MOSFET N-CH 40V 8.9A 8SOIC
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMD5838NLR2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 7.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 785pF @ 20V
• Power - Max: 2.1W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

0.06
0.05
0.04
0.03
0.02
0.01
1.6
1.4
1.2
0.8
0.6
50
40
30
20
10
0
1
−50
0
2
Figure 3. On−Resistance vs. Gate−to−Source
V
I
10 V
D
GS
Figure 1. On−Region Characteristics
Figure 5. On−Resistance Variation with
= 7 A
−25
3
V
= 4.5 V
V
DS
GS
T
1
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
4
0
5.5 V
7.5 V
25
Temperature
5
2
Voltage
50
6
3
7
75
4.4 V
TYPICAL PERFORMANCE CURVES
3.6 V
4 V
3 V
100
T
I
8
D
J
T
= 7 A
= 25°C
4
J
= 25°C
http://onsemi.com
125
9
10
150
5
3
100000
10000
0.035
0.025
0.015
0.005
1000
100
50
40
30
20
10
0
2
2
5
Figure 4. On−Resistance vs. Drain Current and
T
Figure 6. Drain−to−Source Leakage Current
V
V
J
DS
GS
= 25°C
V
T
DS
J
≥ 5 V
= 0 V
= 25°C
V
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GS
, GATE−TO−SOURCE VOLTAGE (V)
6
T
J
15
I
D,
= 125°C
3
DRAIN CURRENT (A)
Gate Voltage
V
T
V
vs. Voltage
GS
J
GS
= 150°C
10
= 4.5 V
= 10 V
T
T
J
J
= −55°C
= 125°C
25
14
4
35
18
5