ECH8659-TL-H ON Semiconductor, ECH8659-TL-H Datasheet

ECH8659-TL-H

Manufacturer Part Number

ECH8659-TL-H

Description

MOSFET N-CH DUAL 30V 7A ECH8

Manufacturer

ON Semiconductor

Series

-r

Datasheet

1.ECH8659-TL-H.pdf (4 pages)

Specifications of ECH8659-TL-H

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

24 mOhm @ 3.5A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

Gate Charge (qg) @ Vgs

11.8nC @ 10V

Input Capacitance (ciss) @ Vds

710pF @ 10V

Power - Max

1.5W

Mounting Type

Surface Mount

Package / Case

8-SMD

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

ECH8659-TL-H

Manufacturer:

SANYO/三洋

Quantity:

20 000

Current page: 1 of 4
Download datasheet (59Kb)

Ordering number : ENA1224

ECH8659

Features

Specifications

Absolute Maximum Ratings at Ta=25°C

Electrical Characteristics at Ta=25°C

Marking : TE

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Total Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

•

4V drive.

Composite type, facilitating high-density mounting.

Halogen free compliance.

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer ' s products or

equipment.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

V (BR)DSS

V GS (off)

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

Symbol

V GSS

V DSS

⏐ yfs ⏐

I DSS

I GSS

Tstg

I DP

Tch

P D

P T

I D

SANYO Semiconductors

PW≤10μs, duty cycle≤1%

When mounted on ceramic substrate (900mm

I D =1mA, V GS =0V

V DS =30V, V GS =0V

V GS =±16V, V DS =0V

V DS =10V, I D =1mA

V DS =10V, I D =3.5A

ECH8659

Conditions

✕0.8mm) 1unit

✕0.8mm)

DATA SHEET

61808PA TI IM TC-00001318

min

1.2

2.2

Ratings

typ

Ratings

3.7

Continued on next page.

--55 to +150

max

±20

150

±10

1.3

1.5

2.6

No. A1224-1/4

Unit

μA

°C

Related parts for ECH8659-TL-H

ECH8659-TL-H Summary of contents

Page 1

... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN ECH8659 SANYO Semiconductors N-Channel Silicon MOSFET General-Purpose Switching Device ...

Page 2

... Switching Time Test Circuit V DD =15V V IN 10V =3. =4.3Ω D PW=10μs D.C.≤1% G ECH8659 P.G 50Ω S ECH8659 Symbol Conditions R DS (on =3.5A =10V R DS (on =2A =4. (on =2A =4V Ciss V DS =10V, f=1MHz Coss V DS =10V, f=1MHz Crss V DS =10V, f=1MHz t d (on) See specified Test Circuit ...

Page 3

... Drain-to-Source Voltage (on = Gate-to-Source Voltage ⏐ fs⏐ 1 0 0.01 0.1 1.0 Drain Current Time -- I D 100 (on 0.1 1.0 Drain Current ECH8659 0.8 1.0 0 0.5 IT13723 70 Ta=25 ° --60 --40 IT13725 =10V 1 0 0.01 0 IT13727 2 1000 100 =15V ...

Page 4

... Ambient Temperature °C Note on usage : Since the ECH8659 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...

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