MRFE6VP8600HR6 Freescale Semiconductor, MRFE6VP8600HR6 Datasheet - Page 6

• Manufacturer Part Number: MRFE6VP8600HR6
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6VP8600HR6

• Lead Free Status / Rohs Status: Compliant

6
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
1000
100
10
Figure 6. Capacitance versus Drain- -Source Voltage
1
1.06
1.05
1.04
1.03
1.02
1.01
0.99
0.98
0.97
0.96
0.95
0.94
0
1
--50
1400 mA
1900 mA
Note: Each side of device measured separately.
Figure 4. Normalized V
10
V
--25
2400 mA
DS
I
DS(Q)
, DRAIN--SOURCE VOLTAGE (VOLTS)
T
= 100 mA
C
Measured with ±30 mV(rms)ac @ 1 MHz
V
Case Temperature
, CASE TEMPERATURE (°C)
GS
0
20
= 0 Vdc
25
GS
30
TYPICAL CHARACTERISTICS — 860 MHz
22
21
20
19
18
17
16
Quiescent versus
10
Figure 8. Pulsed Power Gain and Drain Efficiency
50
V
f = 860 MHz
Pulse Width = 100 μsec
Duty Cycle = 10%
DD
40
V
= 50 Vdc, I
DD
= 50 Vdc
75
C
P
C
rss
out
oss
, OUTPUT POWER (WATTS) PULSED
DQ
versus Output Power
50
= 1400 mA
100
100
10
64
62
60
58
56
54
52
50
Figure 5. Drain Current versus Gate- -Source Voltage
9
8
7
6
5
4
3
2
1
0
Note: Measured with both sides of the transistor tied together.
2.1
G
32
η
ps
D
2.2
Figure 7. Pulsed CW Output Power versus
33
2.3
P1dB = 58.4 dBm (692 W)
34
V
GS
2.4
, GATE--SOURCE VOLTAGE (VOLTS)
35
P2dB = 58.8 dBm (759 W)
2.5
P
in
36
V
Pulse Width = 100 μsec, Duty Cycle = 10%
, INPUT POWER (dBm)
1000
DD
Input Power
2.6
10
60
50
40
30
20
= 50 Vdc, I
0
37
2.7
P3dB = 59.0 dBm (794 W)
38
Freescale Semiconductor
2.8
DQ
V
DD
= 1400 mA, f = 860 MHz
39
2.9
= 50 Vdc
40
RF Device Data
3
41
3.1 3.2
40 Vdc
30 Vdc
20 Vdc
10 Vdc
Actual
42
Ideal
3.3
43