1N6638US MICROSEMI, 1N6638US Datasheet
1N6638US
Manufacturer Part Number
1N6638US
Description
Manufacturer
MICROSEMI
Datasheet
1.1N6638US.pdf
(2 pages)
Specifications of 1N6638US
Rectifier Type
Switching Diode
Configuration
Single
Peak Rep Rev Volt
125V
Avg. Forward Curr (max)
0.3A
Rev Curr
0.5uA
Peak Non-repetitive Surge Current (max)
2.5A
Forward Voltage
1.1V
Operating Temp Range
-65C to 175C
Package Type
B-MELF
Rev Recov Time
4.5ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2
Lead Free Status / Rohs Status
Not Compliant
• 1N6638US,1N6642US, 1N6643US AVAILABLE IN
• 1N6638U,1N6642U, 1N6643U AVAILABLE IN
• SWITCHING DIODES
• NON-CAVITY GLASS PACKAGE
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 300 mA
Derating: 4.6 mA/°C Above T EC = + 110°C
Surge Current: I
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
1N6638U & US
1N6642U & US
1N6643U & US
1N6638U & US
1N6642U & US
1N6643U & US
PER MIL-PRF-19500/578
PER MIL-PRF-19500/578
TYPES
TYPES
=100 µA
V (pk)
FSM
V BR
@ I R
150
100
75
= 20 V
nA dc
I R1
V R
35
25
50
= 2.5A, half sine wave, P w = 8.3ms
V RWM
V (pk)
125
75
50
= V RWM
@ V R
µA dc
I R2
0.5
0.5
0.5
(Pulsed)
=10 mA
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
WEBSITE: http://www.microsemi.com
V F1
V dc
T A = 150°C
I FM
V R = 20 V
0.8
0.8
1.0
µA dc
I R3
50
50
75
V R = V RWM
T A = 150°C
V dc
JAN, JANTX, JANTXV
1.1
1.2
1.2
µA dc
V F2
100
100
160
I R4
(Pulsed)
JAN, JANTX, JANTXV
@ I F2
200
100
100
mA
V R =
C T1
2.5
5.0
5.0
0V
pF
=50 mA
t fr
ns
20
20
20
I F
V R =
C T2
1.5V
2.0
2.8
2.8
pF
AND
I REC = 1 mA
I R = 10 mA
I F = 10 mA
4.5
5.0
6.0
t rr
ns
AND
JANS
JANS
FAX (781) 689-0803
DESIGN DATA
CASE: D-5D, Hermetically sealed glass
case, per MIL-PRF- 19500/578
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (R OJEC ):
50 °C/W maximum at L = 0
THERMAL IMPEDANCE: (Z O JX ): 25
°C/W maximum
POLARITY: Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
1N6638U & US
1N6642U & US
1N6643U & US
DIM
D
G
F
S
MILLIMETERS
MIN
1.78
0.48
4.19
FIGURE 1
0.08MIN.
MAX
2.16
0.71
4.95
0.070 0.085
0.019 0.028
0.165 0.195
MIN MAX
INCHES
0.003MIN.
157
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1N6638US Summary of contents
Page 1
... AVAILABLE IN PER MIL-PRF-19500/578 • 1N6638U,1N6642U, 1N6643U AVAILABLE IN PER MIL-PRF-19500/578 • SWITCHING DIODES • NON-CAVITY GLASS PACKAGE • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 300 mA Derating: 4.6 mA/°C Above 110°C Surge Current ...
Page 2
IN6638U&US, IN6642U&US 1000 100 10 1 0.1 .2 158 . Forward Voltage (V) FIGURE 2 Typical Forward Current vs Forward Voltage 1000 100 10 1 0.1 .01 .001 100 ...