ARF300 MICROSEMI, ARF300 Datasheet

ARF300

Manufacturer Part Number

ARF300

Description

Manufacturer

MICROSEMI

Datasheet

1.ARF300.pdf (4 pages)

Specifications of ARF300

Lead Free Status / Rohs Status

Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

ARF300

Quantity:

1 400

Company:

Meier Automation Equipment Co., Limited

Part Number:

ARF300

Manufacturer:

MICROSEMI/美高森美

Quantity:

20 000

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The ARF300 is a N-CHANNEL RF power transistor in a high efﬁ ciency ﬂ angeless package.

It is designed for high voltage operation in narrow band ISM and MRI power ampliﬁ ers at

frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF

power transistor making the pair well suited for bridge conﬁ gurations

Maximum Ratings

Thermal Characteristics

Static Electrical Characteristics

• Speciﬁ ed 125 Volt, 27 MHz Characteristics:

• RoHS Compliant

Symbol

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

DS(ON)

GS(TH)

, T

GSS

DSS

θJHS

DGO

DSS

θJC

DSS

STG

Output Power = 300 Watts.

Gain = 15dB (Class E)

Efﬁ ciency = 80%

Parameter

Drain-Source Breakdown Voltage (V

On State Drain Voltage

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Forward Transconductance (V

Gate Threshold Voltage (V

Parameter

Junction to Case

Junction to Sink

Parameter

Drain-Source Voltage

Drain-Gate Voltage

Continuous Drain Current @ T

Gate-Source Voltage

Total Power Dissipation @ T

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063” from Case for 10 Sec.

N-CHANNEL ENHANCEMENT MODE

RF POWER MOSFET

(High Efﬁ ciency Thermal Joint Compound and Planar Heat Sink Surface.)

Microsemi Website - http://www.microsemi.com

D(ON)

= V

= 25°C

= 12A, V

= 15V, I

= 25°C

, I

= ±30V, V

= V

= 50V

= 10mA)

= 0V, I

• High Performance

• High Voltage Breakdown and Large SOA

• Low Thermal Resistance.

• Capacitance matched with ARF301 P-Channel

DSS

= 12A)

for Superior Ruggedness

= 10V)

DSS

, V

= 250 μA)

= 0V)

= 0, T

All Ratings: T

= 125°C)

=25°C unless otherwise speciﬁ ed

Min

500

Min

2.5

-55 to 175

Ratings

1000

500

±30

300

Typ

125V, 300W, 45MHz

±100

Max

0.15

0.27

Max

250

ARF300

mhos

°C/W

Volts

Unit

μA

°C

Related parts for ARF300

ARF300 Summary of contents

Page 1

... RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efﬁ ciency ﬂ angeless package designed for high voltage operation in narrow band ISM and MRI power ampliﬁ ers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF power transistor making the pair well suited for bridge conﬁ ...

Page 2

... DUTY CYCLE T = -55° +25° +125° GATE-TO-SOURCE VOLTAGE (VOLTS) GS Figure 2, Typical Transfer Characteristics OPERATION HERE LIMITED BY R (ON Max 100µs 1ms T =+25°C 10ms C T =+175°C J 100ms SINGLE PULSE 1 10 100 1000 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS ARF300 Unit pF Unit dB % ...

Page 3

... =125V dd 15V 10V 8V 7.5V 6. DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 5, Typical Output Characteristics 0 are the external thermal EXT impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. Z (Ω 1.4 17 7.8 11 10.4 7 ARF300 ...

Page 4

... Incorrect mounting can cause internal temperatures to exceed the maximum allowable operating junction temperature. 0.257 Refer to Microsemi Application Note #1810 0.980 before starting system design. http://www.microsemi.com/support/ micnotes/1810.pdf D 0.125 R0.050 S ARF300 Use 4-40 (M3) screws for mounting. Torque = 4-6 in-lb (0.45- 0.7 Nm). ...

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