BF998RE6327XT Infineon Technologies, BF998RE6327XT Datasheet - Page 2

• Manufacturer Part Number: BF998RE6327XT
• Manufacturer: Infineon Technologies

Specifications of BF998RE6327XT

• Channel Type: N
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 12V
• Power Gain (typ)@vds: 28@8VdB
• Noise Figure (max): 2.8(Typ)dB
• Frequency (max): 1GHz
• Package Type: SOT-143R
• Pin Count: 3 +Tab
• Forward Transconductance (typ): 0.024S
• Input Capacitance (typ)@vds: 2.1@8V@Gate 1/1.2@8V@Gate 2pF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

Electrical Characteristics at T
Parameter
DC Characteristics
Drain-source breakdown voltage
I
Gate 1 source breakdown voltage
Gate2 source breakdown voltage
Gate 1 source leakage current
Gate 2 source leakage current
Drain current
V
Gate 1 source pinch-off voltage
V
Gate 2 source pinch-off voltage
V
D
I
I
V
V
DS
DS
DS
G2S
G2S
= 10 µA, V
G1S
G2S
= 8 V, V
= 8 V, V
= 8 V, V
= 10 mA, V
= 10 mA, V
= 5 V, V
= 5 V, V
G1S
G2S
G1S
G1S
G2S
G2S
= 0 , V
= 4 V, I
= 0 , I
G2S
G2S
= -4 V, V
= V
= V
= V
= V
D
DS
DS
G2S
D
= 20 µA
DS
DS
= 0
= 0
G2S
= 20 µA
= 4 V
= 0
= 0
= -4 V
A
= 25°C, unless otherwise specified
2
Symbol
V
I
-V
-V
DSS
V
V
I
I
(BR)DS
G1SS
G2SS
G1S(p)
G2S(p)
(BR)G1SS
(BR)G2SS
min.
12
8
8
5
-
-
-
-
Values
typ.
0.8
0.8
9
-
-
-
-
-
max.
2.5
12
12
50
50
15
2
2007-04-20
-
BF998...
Unit
V
nA
nA
mA
V