ARF473 MICROSEMI, ARF473 Datasheet

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ARF473

Manufacturer Part Number
ARF473
Description
Manufacturer
MICROSEMI
Datasheet

Specifications of ARF473

Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ARF473
Manufacturer:
MINI
Quantity:
1 400
Part Number:
ARF473
Manufacturer:
MICROSEMI/美高森美
Quantity:
20 000
RF POWER MOSFET
N - CHANNEL ENHANCEMENT MODE
The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage
push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
THERMAL CHARACTERISTICS
g
Symbol
Symbol
∆V
Symbol
T
V
BV
V
fs1
V
J
R
I
R
I
V
DS
GS
,T
DSS
GSS
g
P
Specified 135 Volt, 130 MHz Characteristics:
T
GS
DSS
I
θCS
/
θJC
GS
D
DSS
fs
D
L
STG
(ON)
g
(TH)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
(TH)
fs2
Output Power = 300 Watts.
Gain = 13dB (Class AB)
Efficiency = 50%
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Gate-Source Voltage
Total Device Dissipation @ T
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
On State Drain Voltage
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Forward Transconductance (V
Forward Transconductance Match Ratio (V
Gate Threshold Voltage (V
Gate Threshold Voltage Match (V
Characteristic
Junction to Case
Case to Sink
(Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
1
(I
DS
D
(ON)
C
APT Website - http://www.advancedpower.com
= V
C
DS
= 25°C
= 5A, V
= 25°C
DS
GS
GS
= 25V, I
DS
DS
, I
= V
= ±30V, V
GS
D
= V
= 50V, V
GS
= 200mA)
GS
= 0V, I
D
DSS
, I
= 10V)
= 5A)
DS
D
(each device)
, V
= 200mA)
= 25V, I
D
DS
GS
GS
= 250 µA)
= 0V)
= 0, T
Common Source
Push-Pull Pair
= 0V)
D
High Performance Push-Pull RF Package.
High Voltage Breakdown and Large SOA
Low Thermal Resistance.
= 5A)
C
for Superior Ruggedness.
All Ratings: T
= 125°C)
G
G
C
165 V 300 W 150 MHz
= 25°C unless otherwise specified.
MIN
500
MIN
0.9
4
3
D
S
(Flange)
D
-55 to 200
ARF473
ARF473
500
±30
500
300
TYP
TYP
0.1
10
6
±100
MAX
MAX
0.35
250
1.1
0.1
25
4
5
Amps
Watts
UNIT
mhos
Volts
Volts
UNIT
UNIT
°C/W
Volts
Volts
°C
µA
nA

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ARF473 Summary of contents

Page 1

... RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE The ARF473 is a matched pair of RF power transistors in a common source configuration designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz. • Specified 135 Volt, 130 MHz Characteristics: • ...

Page 2

... No Degradation in Output Power C iss C oss 50 C rss DRAIN-TO-SOURCE VOLTAGE (VOLTS DATA FOR BOTH SIDES IN PARALLEL OPERATION HERE LIMITED (ON =+25° =+200°C SINGLE PULSE 100 500 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 4, Typical Maximum Safe Operating Area ARF473 UNIT pF ns UNIT 100us 1ms 10ms 100ms DC ...

Page 3

... Input and output impedances are measured from gate to gate and drain to drain respectively DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 6, Typical Output Characteristics - (Ω (Ω 38 39 33 2. each side DQ ARF473 V GS =15 & 10V 5. Note Duty Factor Peak θ 1.0 10 ...

Page 4

... ARF473 81.36 MHz Test amplifier Po = 500W @130 V Vg1 TL1 C1 C2 TL2 Vg2 DUT Peak Output Power vs... Vdd 900 800 Max 700 Duty Cycle 600 500 P o Watts 400 300 200 100 0 80 100 120 Drain Supply Voltage Vdd 1.100 .435 1 2 0.400 ...

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