IRFS4710HR International Rectifier, IRFS4710HR Datasheet - Page 2

• Manufacturer Part Number: IRFS4710HR
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of IRFS4710HR

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.014Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 75A
• Power Dissipation: 3.8W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / Rohs Status: Not Compliant

Diode Characteristics
IRFB/IRFS/IRFL4710
Avalanche Characteristics
Dynamic @ T
Static @ T
E
I
E
R
I
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
I
AR
GSS
SM
DSS
d(on)
d(off)
S
rr
on
r
f
2
V
fs
AS
AR
(BR)DSS
DS(on)
GS(th)
SD
iss
oss
rss
oss
oss
oss
rr
g
gs
gd
(BR)DSS
eff.
/ T
J
Breakdown Voltage Temp. Coefficient
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 0.011 0.014
Min. Typ. Max. Units
Min. Typ. Max. Units
3.5
Min. Typ. Max. Units
–––
–––
–––
35
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.11 –––
6160 –––
1580 –––
–––
–––
–––
–––
–––
––– -100
–––
110
130
440
250
280
430
–––
–––
–––
180
43
40
35
41
38
74
300
110
260
–––
250
100
–––
170
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.3
5.5
1.0
75
V/°C
µA
nA
nC
ns
nC
pF
ns
V
V
S
A
V
Typ.
–––
–––
–––
Reference to 25°C, I
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
integral reverse
I
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 45A
= 45A
= 25°C, I
= 25°C, I
= 4.5
= 50V, I
= 50V
= 25V
= 0V, I
= 10V, I
= V
= 95V, V
= 80V, V
= 20V
= -20V
= 10V,
= 50V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
Conditions
DS
DS
= 250µA
GS
GS
Conditions
Conditions
= 45A, V
= 45A
= 250µA
= 45A
= 45A
= 0V to 80V
Max.
= 1.0V, ƒ = 1.0MHz
= 80V, ƒ = 1.0MHz
190
= 0V
= 0V, T
45
20
D
www.irf.com
= 1mA
GS
J
= 150°C
= 0V
G
Units
S
+L
mJ
mJ
A
D
D
S
)