PM45502C HITACHI, PM45502C Datasheet
PM45502C
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PM45502C Summary of contents
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... High Speed Power Switching Features Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain Isolated base from Terminal Suitable for motor driver, switching regulator and etc. PM45502C ...
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... PM45502C Outline Absolute Maximum Ratings (Ta = 25°C) (Per FET chip) Item Drain source voltage Gate source voltage Drain current Drain peak current Body to drain diode reverse drain current Body to drain diode reverse drain peak current Channel dissipation Channel temperature Storage temperature Insulation dielectric Notes: 1. Value 25° ...
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... V — 2.0 3.0 V — 0.08 0. — S — 10250 — pF — 3600 — pF — 400 — pF — 150 — ns — 700 — ns — 800 — ns — 600 — ns — 1.2 — V — 200 — ns PM45502C Test conditions mA ± ±100 µ 360 mA ...
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... PM45502C When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’ ...