C5121 Panasonic, C5121 Datasheet
C5121
Manufacturer Part Number
C5121
Description
Manufacturer
Panasonic
Datasheet
1.C5121.pdf
(3 pages)
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www.datasheet4u.com
Power Transistors
2SC5121
Silicon NPN triple diffusion planar type
For general amplification
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
• High collector-base voltage (Emitter open) V
• High collector-emitter voltage (Base open) V
• Small collector output capacitance (Common base, input open
• TO-126B package which requires no insulation plate for installa-
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
circuited) C
tion to the heat sink
Parameter
Parameter
ob
*
*
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
I
P
I
T
V
V
CBO
CEO
EBO
a
CP
I
I
C
stg
CE(sat)
C
C
h
CBO
CEO
j
f
CEO
EBO
= 25°C
FE
T
ob
−55 to +150
CBO
CEO
Rating
I
I
V
V
V
I
V
V
C
E
C
400
400
100
150
CB
1.2
CB
CE
CE
CB
70
= 1 µA, I
= 100 µA, I
= 50 mA, I
7
SJD00140BED
= 380 V, I
= 10 V, I
= 10 V, I
= 300 V, I
= 10 V, I
C
Conditions
E
Unit
= 0
C
B
E
mA
mA
°C
°C
B
W
V
V
V
E
B
= −10 mA, f = 200 MHz
= 5 mA
= 5 mA
= 0, f = 1 MHz
= 0
= 0
= 0, T
a
= 80°C
φ 3.16
±0.1
0.75
±0.1
1
8.0
4.6
Min
400
30
50
7
+0.5
–0.1
±0.2
2
3
2.3
0.5
Typ
±0.2
±0.1
80
4
TO-126B-A1 Package
0.5
Max
100
1.2
10
10
±0.1
8
1: Emitter
2: Collector
3: Base
Unit: mm
1.76
3.2
MHz
Unit
µA
µA
pF
V
V
V
±0.2
±0.1
1
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C5121 Summary of contents
Page 1
... Power Transistors www.datasheet4u.com 2SC5121 Silicon NPN triple diffusion planar type For general amplification ■ Features • High collector-base voltage (Emitter open) V • High collector-emitter voltage (Base open) V • Small collector output capacitance (Common base, input open circuited • TO-126B package which requires no insulation plate for installa- tion to the heat sink ■ ...
Page 2
... 2.4 Without heat sink 2.0 1.6 1.2 0.8 0 120 Ambient temperature T (°C) a CE(sat 0.1 0.01 0.001 0 Collector current I (mA 120 100 160 Collector-emitter voltage V = 100 0.1 1 Collector current I SJD00140BED I C 120 T =25˚C C 100 80 I =1.2mA B 1 ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products ...